Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family

Onur Memioglu, A. Karakuzulu, A. Gundel, F. Koçer, O. Aydin Civi
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引用次数: 1

Abstract

This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors' 0.25 $\mu$ m GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7–11 GHz and the second design tuned between 10–12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.
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封装GaN x波段功率放大器系列的设计与实现
本文介绍了两种商用封装的宽带AB类大功率放大器(PA)的设计和验证结果。两款放大器均采用WIN半导体的0.25美元/ μ美元GaN on SiC技术设计。所选择的GaN工艺具有紧凑的共源(CS)晶体管布局,具有单独的源接地过孔。该系列跨越整个x波段频率,第一种设计在7-11 GHz之间调谐,第二种设计在10-12 GHz之间调谐。这两种设计在整个带宽内的饱和功率输出都大于25w,峰值功率增加效率为30%。提出了一种多级功率组合匹配策略,以实现宽带性能和功率输出的平衡。为了呈现一个功能齐全的PA系列,在对PA的MMIC设计进行深入讨论的同时,还讨论了封装的热管理,包括PCB设计和主动冷却方法。
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