Observation of Hofstadter butterfly and valley Hall effect in hBN/graphene/hBN heterostructures

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528719

K. Komatsu, E. Watanabe, D. Tsuya, Kenji Watanabe, T. Taniguchi, S. Moriyama

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Abstract

Recently, heterostructures of 2-D materials have attracted great interests because they form superlattices which allow band engineering as well as use of multiple degenerate degrees of freedom. We have fabricated hexag- onal boron nitride (hBN)/graphene/hBN superlattices with one-dimensional edge contacts as well as a Hall-bar geometry. Clear conductance oscillations in magnetic fields have been observed, originating from the Hofstadter's butterfly which indicates the good alignment of graphene and hBN crystal orientation. In addition, giant non-local resistance near secondary Dirac point originated by the valley Hall effect has been observed in zero magnetic field. Our experimental results indicate the high quality samples of graphene superlattices with quasi-ballistic transport regime are realized.

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hBN/石墨烯/hBN异质结构中霍夫施塔特蝴蝶效应和谷霍尔效应的观察

近年来，二维材料的异质结构引起了人们极大的兴趣，因为它们形成了超晶格，可以进行能带工程以及使用多个简并自由度。我们制备了六方氮化硼(hBN)/石墨烯/hBN超晶格，具有一维边缘接触和霍尔棒几何结构。已经观察到磁场中明显的电导振荡，起源于霍夫施塔特蝴蝶，这表明石墨烯和hBN晶体取向良好对齐。此外，在零磁场条件下，在二次狄拉克点附近观察到由谷霍尔效应引起的巨大非局域电阻。实验结果表明，实现了具有准弹道输运机制的高质量石墨烯超晶格样品。

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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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