Growth and characterization of (Zn, Sn, Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2017-02-01 DOI:10.1002/pssb.201600568

H. Toyota, T. Terauchi, S. Hidaka, T. Kato, N. Uchitomi

{"title":"Growth and characterization of (Zn, Sn, Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy","authors":"H. Toyota, T. Terauchi, S. Hidaka, T. Kato, N. Uchitomi","doi":"10.1002/pssb.201600568","DOIUrl":null,"url":null,"abstract":"We fabricated (Zn, Sn, Ga)As2 thin films grown on semi-insulating GaAs(001) substrate by molecular beam epitaxy and characterized their structural, compositional and electrical properties in terms of conduction-type control. The X-ray diffraction peaks of (Zn, Sn, Ga)As2 films which shift toward lower angle compared with that of (Zn, Sn)As2 film indicate that Ga incorporating in (Zn, Sn)As2 decrease their lattice constants. Compositional analysis by electron-probe micro analyzer (EPMA) indicated that the composition ratios of Zn to all the cation sites are smaller than that of Sn. Hall effect measurements of these (Zn, Sn, Ga)As2 thin films showed n-type conductivity. These results suggest that Ga atoms are substituted for Zn atoms more than Sn atoms and change their conduction type from p-type to n-type.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/pssb.201600568","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

We fabricated (Zn, Sn, Ga)As2 thin films grown on semi-insulating GaAs(001) substrate by molecular beam epitaxy and characterized their structural, compositional and electrical properties in terms of conduction-type control. The X-ray diffraction peaks of (Zn, Sn, Ga)As2 films which shift toward lower angle compared with that of (Zn, Sn)As2 film indicate that Ga incorporating in (Zn, Sn)As2 decrease their lattice constants. Compositional analysis by electron-probe micro analyzer (EPMA) indicated that the composition ratios of Zn to all the cation sites are smaller than that of Sn. Hall effect measurements of these (Zn, Sn, Ga)As2 thin films showed n-type conductivity. These results suggest that Ga atoms are substituted for Zn atoms more than Sn atoms and change their conduction type from p-type to n-type.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

分子束外延法在GaAs(001)衬底上生长(Zn, Sn, Ga)As2薄膜及表征

采用分子束外延法在半绝缘GaAs(001)衬底上制备了(Zn, Sn, Ga)As2薄膜，并从导电型控制的角度对其结构、组成和电学性能进行了表征。(Zn, Sn, Ga)As2薄膜的x射线衍射峰比(Zn, Sn)As2薄膜的x射线衍射峰偏移角度更小，表明Ga的加入降低了(Zn, Sn)As2薄膜的晶格常数。电子探针微量分析仪(EPMA)的成分分析表明，Zn与所有阳离子位的组成比都小于Sn。这些(Zn, Sn, Ga)As2薄膜的霍尔效应测量显示出n型电导率。这些结果表明，Ga原子比Sn原子更容易取代Zn原子，并使其导电类型从p型转变为n型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

自引率

0.00%

发文量