2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)最新文献
Crystal structure and thermoelectric properties of an organic compound of tetrathiafulvalene (TTF) and iodine (I), TTF-I0.71, were investigated. From X-ray diffraction of TTF-I0.71 powder prepared by a solid state reaction, the superspace group of TTF-I0.71 was determined as C2/m(α0γ)0s. The TTF-Ix thin films were also fabricated on a glass substrate. It was found that the actual composition x increased with film thickness, and reached to about 0.72 above 300 nm. The Seebeck coefficient and electrical conductivity of the films showed time-dependent change, probably due to the homogenization of iodine concentration in the film.
{"title":"Structural and thermoelectric properties of TTF-I0.71 organic compound","authors":"K. Hayashi, Kento Kuba, Y. Miyazaki","doi":"10.1002/pssb.201600513","DOIUrl":"https://doi.org/10.1002/pssb.201600513","url":null,"abstract":"Crystal structure and thermoelectric properties of an organic compound of tetrathiafulvalene (TTF) and iodine (I), TTF-I0.71, were investigated. From X-ray diffraction of TTF-I0.71 powder prepared by a solid state reaction, the superspace group of TTF-I0.71 was determined as C2/m(α0γ)0s. The TTF-Ix thin films were also fabricated on a glass substrate. It was found that the actual composition x increased with film thickness, and reached to about 0.72 above 300 nm. The Seebeck coefficient and electrical conductivity of the films showed time-dependent change, probably due to the homogenization of iodine concentration in the film.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125793494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Toyota, T. Terauchi, S. Hidaka, T. Kato, N. Uchitomi
We fabricated (Zn, Sn, Ga)As2 thin films grown on semi-insulating GaAs(001) substrate by molecular beam epitaxy and characterized their structural, compositional and electrical properties in terms of conduction-type control. The X-ray diffraction peaks of (Zn, Sn, Ga)As2 films which shift toward lower angle compared with that of (Zn, Sn)As2 film indicate that Ga incorporating in (Zn, Sn)As2 decrease their lattice constants. Compositional analysis by electron-probe micro analyzer (EPMA) indicated that the composition ratios of Zn to all the cation sites are smaller than that of Sn. Hall effect measurements of these (Zn, Sn, Ga)As2 thin films showed n-type conductivity. These results suggest that Ga atoms are substituted for Zn atoms more than Sn atoms and change their conduction type from p-type to n-type.
{"title":"Growth and characterization of (Zn, Sn, Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy","authors":"H. Toyota, T. Terauchi, S. Hidaka, T. Kato, N. Uchitomi","doi":"10.1002/pssb.201600568","DOIUrl":"https://doi.org/10.1002/pssb.201600568","url":null,"abstract":"We fabricated (Zn, Sn, Ga)As2 thin films grown on semi-insulating GaAs(001) substrate by molecular beam epitaxy and characterized their structural, compositional and electrical properties in terms of conduction-type control. The X-ray diffraction peaks of (Zn, Sn, Ga)As2 films which shift toward lower angle compared with that of (Zn, Sn)As2 film indicate that Ga incorporating in (Zn, Sn)As2 decrease their lattice constants. Compositional analysis by electron-probe micro analyzer (EPMA) indicated that the composition ratios of Zn to all the cation sites are smaller than that of Sn. Hall effect measurements of these (Zn, Sn, Ga)As2 thin films showed n-type conductivity. These results suggest that Ga atoms are substituted for Zn atoms more than Sn atoms and change their conduction type from p-type to n-type.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127530318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The tight binding method was used to calculated the band diagrams of monolayer MoS2 and its nanoribbon structures. Both the quantum confinement effect and the strain effect have been studied. We applied tensile strains on both confined and transport directions of the nanoribbon and investigated the impacts on the band gap and the effective mass. We found that the band gap and the effective mass decrease with an increasing strain. In addition, the tensile strain along the transport direction has better effect on reducing the valence band effective mass. Although the valence band edge changes from K valley to the heavier Γ valley, applying a proper strain can still improve the transport properties.
{"title":"Electronic properties of MoS2 nanoribbon with strain using tight binding method","authors":"Shuoyuan Chen, Yuh‐Renn Wu","doi":"10.1002/pssb.201600565","DOIUrl":"https://doi.org/10.1002/pssb.201600565","url":null,"abstract":"The tight binding method was used to calculated the band diagrams of monolayer MoS2 and its nanoribbon structures. Both the quantum confinement effect and the strain effect have been studied. We applied tensile strains on both confined and transport directions of the nanoribbon and investigated the impacts on the band gap and the effective mass. We found that the band gap and the effective mass decrease with an increasing strain. In addition, the tensile strain along the transport direction has better effect on reducing the valence band effective mass. Although the valence band edge changes from K valley to the heavier Γ valley, applying a proper strain can still improve the transport properties.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133113113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yang Li, G. Ng, S. Arulkumaran, C. M. Kumar, K. Ang, Zhi Hong Liu
Summary form only given. We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I-V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I-V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared to Ni/Au Schottky gate, the HEMT with TiN gate shows comparable DC output and transfer characteristics, improved OFF-state breakdown voltage (VBRoff) with very small drain current collapse, indicating the feasibility of using sputtered TiN for the fabrication of CMOS-compatible AlGaN/GaN HEMTs.
{"title":"AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate","authors":"Yang Li, G. Ng, S. Arulkumaran, C. M. Kumar, K. Ang, Zhi Hong Liu","doi":"10.1002/pssa.201600555","DOIUrl":"https://doi.org/10.1002/pssa.201600555","url":null,"abstract":"Summary form only given. We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I-V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I-V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared to Ni/Au Schottky gate, the HEMT with TiN gate shows comparable DC output and transfer characteristics, improved OFF-state breakdown voltage (VBRoff) with very small drain current collapse, indicating the feasibility of using sputtered TiN for the fabrication of CMOS-compatible AlGaN/GaN HEMTs.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134546758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A strain sensor was fabricated based on a resonant tunneling diode (RTD) oscillator. This sensor uses strain dependent frequency change of the RTD oscillator, and the frequency delta-sigma modulation (frequency DSM, or FDSM) technique, which can convert a frequency to a digital signal with wide dynamic range and wide bandwidth. The sensor consists of an oscillator using an LC resonator and an RTD loaded on a beam of the cantilever. The cantilever was fabricated using selective wet etching of the InP substrate. In this sensor, the strain applied to the cantilever changes the current-voltage characteristics of the RTD due to the piezoelectric effect, and hence it changes the oscillation frequency. In this paper, it is demonstrated that the acoustic strain signal can be successfully detected by this sensor with noise shaping behavior, which is a unique nature of the DSM.
{"title":"Experimental demonstration of strain detection using resonant tunneling delta-sigma modulation sensors","authors":"Takumi Tajika, Y. Kakutani, M. Mori, K. Maezawa","doi":"10.1002/pssa.201600548","DOIUrl":"https://doi.org/10.1002/pssa.201600548","url":null,"abstract":"A strain sensor was fabricated based on a resonant tunneling diode (RTD) oscillator. This sensor uses strain dependent frequency change of the RTD oscillator, and the frequency delta-sigma modulation (frequency DSM, or FDSM) technique, which can convert a frequency to a digital signal with wide dynamic range and wide bandwidth. The sensor consists of an oscillator using an LC resonator and an RTD loaded on a beam of the cantilever. The cantilever was fabricated using selective wet etching of the InP substrate. In this sensor, the strain applied to the cantilever changes the current-voltage characteristics of the RTD due to the piezoelectric effect, and hence it changes the oscillation frequency. In this paper, it is demonstrated that the acoustic strain signal can be successfully detected by this sensor with noise shaping behavior, which is a unique nature of the DSM.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125260085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-04DOI: 10.1109/ICIPRM.2016.7528694
Y. Shirahata, A. Suzuki, T. Oku
Bismuth ferrite (BiFeO3) thin films were fabricated by a simple spin-coating method. Polycrystalline BiFeO3 thin films were confirmed by X-ray diffraction. Lattice constants and crystallite sizes of the BiFeO3 thin films increased with increasing concentration of BiFeO3 precursor solution. BiFeO3/CH3NH3PbI3 photovoltaic devices were fabricated to characterize photovoltaic properties. Current density-voltage characteristics of the photovoltaic devices exhibited rectifying behaviors, indicating that BiFeO3 layer acted an electron transport layer.
{"title":"Fabrication and characterization of BiFeO3 thin films and application for photovoltaic devices","authors":"Y. Shirahata, A. Suzuki, T. Oku","doi":"10.1109/ICIPRM.2016.7528694","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528694","url":null,"abstract":"Bismuth ferrite (BiFeO<sub>3</sub>) thin films were fabricated by a simple spin-coating method. Polycrystalline BiFeO<sub>3</sub> thin films were confirmed by X-ray diffraction. Lattice constants and crystallite sizes of the BiFeO<sub>3</sub> thin films increased with increasing concentration of BiFeO<sub>3</sub> precursor solution. BiFeO<sub>3</sub>/CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> photovoltaic devices were fabricated to characterize photovoltaic properties. Current density-voltage characteristics of the photovoltaic devices exhibited rectifying behaviors, indicating that BiFeO<sub>3</sub> layer acted an electron transport layer.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128968342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-04DOI: 10.1109/ICIPRM.2016.7528619
Chuanqing Yu, Baifu Zhang, Yi Xiao, Takuo Tanemura, Y. Nakano
We present the design of an electrically pumped metallic cavity laser based on optical, electrical and thermal simulations. By inserting an InAlAs blocking layer, leakage current is effectively suppressed, leading to 50% reduction of threshold current together with better thermal stability. Through combined optical and electrical analyses, the insulation layer thickness is set to be 60 nm, where the device shows optimized overall performance.
{"title":"Comprehensive analysis on electrically pumped metallic cavity lasers","authors":"Chuanqing Yu, Baifu Zhang, Yi Xiao, Takuo Tanemura, Y. Nakano","doi":"10.1109/ICIPRM.2016.7528619","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528619","url":null,"abstract":"We present the design of an electrically pumped metallic cavity laser based on optical, electrical and thermal simulations. By inserting an InAlAs blocking layer, leakage current is effectively suppressed, leading to 50% reduction of threshold current together with better thermal stability. Through combined optical and electrical analyses, the insulation layer thickness is set to be 60 nm, where the device shows optimized overall performance.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116565791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-04DOI: 10.1109/ICIPRM.2016.7528752
Jun-ichi Suzuki, S. Inoue, Shovon M. D. Tanvir Hasan, Y. Hayashi, T. Amemiya, N. Nishiyama, S. Arai
We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe width of 4.5 μm and the cavity length of 500 μm.
我们在硅平台上实现了具有AlInAs-oxide电流约束结构的GaInAsP/SOI混合fabry - p (FP)激光器。采用等离子体激活键合技术，采用湿氧化法氧化GaInAsP量子阱上方的AlInAs层。在未氧化条纹宽度为4.5 μm，腔长为500 μm的条件下，获得了阈值电流为50 mA，外差分量子效率为11%/facet。
{"title":"GaInAsP/SOI hybrid laser with AlInAs-oxide confinement structure fabricated by plasma activated bonding","authors":"Jun-ichi Suzuki, S. Inoue, Shovon M. D. Tanvir Hasan, Y. Hayashi, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2016.7528752","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528752","url":null,"abstract":"We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe width of 4.5 μm and the cavity length of 500 μm.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133640282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-04DOI: 10.1109/ICIPRM.2016.7528562
S. Moroni, V. Dimastrodonato, T. Chung, G. Juska, A. Gocalinska, D. Vvedensky, E. Pelucchi
In this work we present the modeling of Metal Organic Vapour-Phase Epitaxy (MOVPE) of InGaAs nanostructures in non-planar V-grooves and pyramidal recesses. Our well-established growth model has been first employed to find a set of optimized kinetic parameters for InGaAs epitaxy by fitting the morphological and compositional evolution during the growth of In0.12Ga0.88As V-groove quantum wires. These parameters allowed also reproducing the growth of In0.25Ga0.75As nanostructures formed in pyramidal site-controlled quantum dot systems. Finally, the temperature dependence of the structures resulting from our simulation has been compared to the optical properties previously reported in our studies.
{"title":"Modeling InGaAs MOVPE in V-grooves and pyramidal recesses","authors":"S. Moroni, V. Dimastrodonato, T. Chung, G. Juska, A. Gocalinska, D. Vvedensky, E. Pelucchi","doi":"10.1109/ICIPRM.2016.7528562","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528562","url":null,"abstract":"In this work we present the modeling of Metal Organic Vapour-Phase Epitaxy (MOVPE) of InGaAs nanostructures in non-planar V-grooves and pyramidal recesses. Our well-established growth model has been first employed to find a set of optimized kinetic parameters for InGaAs epitaxy by fitting the morphological and compositional evolution during the growth of In0.12Ga0.88As V-groove quantum wires. These parameters allowed also reproducing the growth of In0.25Ga0.75As nanostructures formed in pyramidal site-controlled quantum dot systems. Finally, the temperature dependence of the structures resulting from our simulation has been compared to the optical properties previously reported in our studies.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124961731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-04DOI: 10.1109/ICIPRM.2016.7528744
A. Kyrtsos, M. Matsubara, E. Bellotti
Using Density Functional Theory we have investigated the migration of oxygen vacancies and hydrogen impurities in the oxide β-Ga2O3. For our studies we used the Nudged Elastic Band (NEB) method in order to determine the Minimum Energy Paths (MEP) and the migration barriers. Neutral and doubly charged oxygen vacancies are considered to be the most common intrinsic defects in Ga2O3. In addition, hydrogen is a common background impurity. Our results indicate that these defects are mobile at growth temperatures.
{"title":"First principles study of the diffusion of oxygen vacancies in Ga2O3","authors":"A. Kyrtsos, M. Matsubara, E. Bellotti","doi":"10.1109/ICIPRM.2016.7528744","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528744","url":null,"abstract":"Using Density Functional Theory we have investigated the migration of oxygen vacancies and hydrogen impurities in the oxide β-Ga2O3. For our studies we used the Nudged Elastic Band (NEB) method in order to determine the Minimum Energy Paths (MEP) and the migration barriers. Neutral and doubly charged oxygen vacancies are considered to be the most common intrinsic defects in Ga2O3. In addition, hydrogen is a common background impurity. Our results indicate that these defects are mobile at growth temperatures.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124951319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
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