M. Miyashita, T. Okuda, H. Kurusu, S. Shimamura, S. Konishi, J. Udomoto, R. Matsushita, Y. Sasaki, S. Suzuki, T. Miura, M. Komaru, K. Yamamoto
{"title":"Fully Integrated GaAs HBT MMIC Power Amplifier Modules for 2.5/3.5-GHz-Band WiMAX Applications","authors":"M. Miyashita, T. Okuda, H. Kurusu, S. Shimamura, S. Konishi, J. Udomoto, R. Matsushita, Y. Sasaki, S. Suzuki, T. Miura, M. Komaru, K. Yamamoto","doi":"10.1109/CSICS07.2007.50","DOIUrl":null,"url":null,"abstract":"This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. Each amplifier module integrates a fully 50-Omega input/output matched three-stage amplifier, a 0/20-dB step attenuator, an attenuator controller, and an RF detector together with all bias circuits, featuring on-module full integration. The step attenuator operating with high power handling capability, low-distortion, and low-bias current is placed between the first and second stages, thereby suppressing the change of the input return loss between thru and attenuation modes. With the 4.5 mm x 4.5 mm small-size module, optimized circuit design approaches lead to the following good measurement results under the 6-V supply voltage and WiMAX modulation (64QAM) test condition. The 2.5-GHz-band PA is capable of delivering a high gain (Gp) of over 31.9 dB, EVM of less than 2.1%, and PAE of more than 13.4% at a 28-dBm high output power (Pout). For the 3.5-GHz-band PA, a high Gp of over 28.1 dB, EVM of less than 2.4%, and PAE of over 11% are achieved at a Pout, of 28 dBm.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.50","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. Each amplifier module integrates a fully 50-Omega input/output matched three-stage amplifier, a 0/20-dB step attenuator, an attenuator controller, and an RF detector together with all bias circuits, featuring on-module full integration. The step attenuator operating with high power handling capability, low-distortion, and low-bias current is placed between the first and second stages, thereby suppressing the change of the input return loss between thru and attenuation modes. With the 4.5 mm x 4.5 mm small-size module, optimized circuit design approaches lead to the following good measurement results under the 6-V supply voltage and WiMAX modulation (64QAM) test condition. The 2.5-GHz-band PA is capable of delivering a high gain (Gp) of over 31.9 dB, EVM of less than 2.1%, and PAE of more than 13.4% at a 28-dBm high output power (Pout). For the 3.5-GHz-band PA, a high Gp of over 28.1 dB, EVM of less than 2.4%, and PAE of over 11% are achieved at a Pout, of 28 dBm.