SiGe-based high-speed ADCs are promising for emerging higher frequency band applications such as coherent optical systems or millimeter-wave radios because of the inherent advantages of high-speed, high integration, and high yield technology. This paper addresses recent developments in high-speed ADCs in SiGe technology. An approach is then presented for development of ultra-high-speed ADCs for the next-generation wired or wireless communication systems.
{"title":"High-Speed Analog-to-Digital Converters in SiGe Technologies","authors":"Jaesik Lee","doi":"10.1109/CSICS07.2007.23","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.23","url":null,"abstract":"SiGe-based high-speed ADCs are promising for emerging higher frequency band applications such as coherent optical systems or millimeter-wave radios because of the inherent advantages of high-speed, high integration, and high yield technology. This paper addresses recent developments in high-speed ADCs in SiGe technology. An approach is then presented for development of ultra-high-speed ADCs for the next-generation wired or wireless communication systems.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116030536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Osmany, F. Herzel, J. Scheytt, K. Schmalz, W. Winkler
We present a fully integrated phase-locked loop tunable from 17.5 GHz to 19.2 GHz fabricated in a 0.25 mum SiGe BiCMOS technology. The measured phase noise is below -110 dBc/Hz at 1 MHz offset over the whole tuning range. Based on an integer-N architecture, the synthesizer consumes 248 mW and occupies a chip area of 2.1 mm including pads. Quadrature outputs at quarter of the oscillator frequency are produced, which are required in a sliding-IF 24 GHz transceiver. Possible applications include wireless LAN as well as satellite communication. The measured phase noise is the lowest among previously published Si-based integrated synthesizers above 12 GHz.
{"title":"An Integrated 19-GHz Low-Phase-Noise Frequency Synthesizer in SiGe BiCMOS Technology","authors":"S. Osmany, F. Herzel, J. Scheytt, K. Schmalz, W. Winkler","doi":"10.1109/CSICS07.2007.44","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.44","url":null,"abstract":"We present a fully integrated phase-locked loop tunable from 17.5 GHz to 19.2 GHz fabricated in a 0.25 mum SiGe BiCMOS technology. The measured phase noise is below -110 dBc/Hz at 1 MHz offset over the whole tuning range. Based on an integer-N architecture, the synthesizer consumes 248 mW and occupies a chip area of 2.1 mm including pads. Quadrature outputs at quarter of the oscillator frequency are produced, which are required in a sliding-IF 24 GHz transceiver. Possible applications include wireless LAN as well as satellite communication. The measured phase noise is the lowest among previously published Si-based integrated synthesizers above 12 GHz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117239527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, a 2.4-GHz low-power LC VCO with high performance in phase noise is designed and implemented in 0.18um CMOS process for IEEE 802. llg WLAN. Based on measurement results, it has the phase noise of -121.11dBc/Hz @lMHz offset from a 2.4GHz carrier. The total power dissipation is only 0.675 mW at 1.2-V power supply voltage. The oscillator is tuned from 2.28 GHz to 2.47 GHz while a tuning voltage varies from 0 V to 1.8 V. Within the author's knowledge, this VCO has the lowest phase noise among the VCOs which consume less-than-1 mW power.
{"title":"A Low-Power CMOS VCO for 2.4GHz WLAN","authors":"H. Choi, Q. Bui, C. Park","doi":"10.1109/CSICS07.2007.42","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.42","url":null,"abstract":"In this paper, a 2.4-GHz low-power LC VCO with high performance in phase noise is designed and implemented in 0.18um CMOS process for IEEE 802. llg WLAN. Based on measurement results, it has the phase noise of -121.11dBc/Hz @lMHz offset from a 2.4GHz carrier. The total power dissipation is only 0.675 mW at 1.2-V power supply voltage. The oscillator is tuned from 2.28 GHz to 2.47 GHz while a tuning voltage varies from 0 V to 1.8 V. Within the author's knowledge, this VCO has the lowest phase noise among the VCOs which consume less-than-1 mW power.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131177384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.
{"title":"Statistical Large-Signal Model Enabling Yield Optimization in High-Power Amplifier Design","authors":"W. Stiebler, Pavlos Kolias, J. Sanctuary","doi":"10.1109/CSICS07.2007.25","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.25","url":null,"abstract":"A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"279 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114487427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Deal, X. Mei, V. Radisic, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, R. Lai
In this paper, an amplifier with a significant amount of gain is demonstrated at sub-millimeter wave frequencies (f > 300-GHz) for the first time. The three stage amplifier uses advanced InP HEMT transistors to realize 16-dB gain at 340-GHz and > 20 dB gain at 280-GHz. The amplifier demonstrates > 100 GHz of bandwidth with gain > 10 dB. This paper demonstrates that full WR-3 waveguide band (220-325 GHz) InP HEMT amplifiers are currently possible and that current device capabilities enable operation well into the sub-millimeter wave regime.
{"title":"Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz","authors":"W. Deal, X. Mei, V. Radisic, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, R. Lai","doi":"10.1109/CSICS07.2007.19","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.19","url":null,"abstract":"In this paper, an amplifier with a significant amount of gain is demonstrated at sub-millimeter wave frequencies (f > 300-GHz) for the first time. The three stage amplifier uses advanced InP HEMT transistors to realize 16-dB gain at 340-GHz and > 20 dB gain at 280-GHz. The amplifier demonstrates > 100 GHz of bandwidth with gain > 10 dB. This paper demonstrates that full WR-3 waveguide band (220-325 GHz) InP HEMT amplifiers are currently possible and that current device capabilities enable operation well into the sub-millimeter wave regime.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125979636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Plouchart, Daiek Kim, Jonghae Kim, V. Karam, C. Plett, Choongyeun Cho, R. Trzcinski
A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90 nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81 GHz at 1.2 V, and a core power of 15.6 mW. The divider can operate down to 0.5 V at a maximum operating frequency of 75.6 GHz with a core power of 2.75 mW.
采用数字90nm SOI CMOS技术制备了带通负载的2:1静态分频器。该分压器在1.2 V时的最大工作频率为81 GHz，核心功率为15.6 mW。该分压器工作电压低至0.5 V，最大工作频率为75.6 GHz，核心功率为2.75 mW。
{"title":"A 1.2V 15.6mW 81GHz 2:1 Static CML Frequency Divider with a Band-Pass Load in a 90nm SOI CMOS Technology","authors":"J. Plouchart, Daiek Kim, Jonghae Kim, V. Karam, C. Plett, Choongyeun Cho, R. Trzcinski","doi":"10.1109/CSICS07.2007.28","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.28","url":null,"abstract":"A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90 nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81 GHz at 1.2 V, and a core power of 15.6 mW. The divider can operate down to 0.5 V at a maximum operating frequency of 75.6 GHz with a core power of 2.75 mW.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122344381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Niknejad, S. Emami, B. Heydari, M. Bohsali, E. Adabi
Aggressive technology scaling of CMOS has culminated in a low-cost high volume commercial process technology with Ft > 150 GHz and Fmax > 200 GHz. This paper discusses the key trends in CMOS scaling that have led to this level of performance and attempts to predict the performance down to 45 nm. The design of active and passive components in CMOS for power gain and low noise are discussed in detail and unique features of CMOS technology are highlighted. Experimental results derived from a 60 GHz amplifier in 90 nm CMOS and a complete 60 GHz front-end receiver in 130 nm CMOS are reported.
{"title":"Nanoscale CMOS for mm-Wave Applications","authors":"A. Niknejad, S. Emami, B. Heydari, M. Bohsali, E. Adabi","doi":"10.1109/CSICS07.2007.37","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.37","url":null,"abstract":"Aggressive technology scaling of CMOS has culminated in a low-cost high volume commercial process technology with Ft > 150 GHz and Fmax > 200 GHz. This paper discusses the key trends in CMOS scaling that have led to this level of performance and attempts to predict the performance down to 45 nm. The design of active and passive components in CMOS for power gain and low noise are discussed in detail and unique features of CMOS technology are highlighted. Experimental results derived from a 60 GHz amplifier in 90 nm CMOS and a complete 60 GHz front-end receiver in 130 nm CMOS are reported.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132520245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article discusses recent advances of nonpolar and semipolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs). Devices fabricated on these alternative orientations are already beginning to realize significant performance milestones. Nonpolar GaN has been employed to facilitate high-power LEDs and to realize CW operation of novel AlGaN-cladding-free LD structures. Semipolar GaN has also been successfully used to demonstrate LDs and to realize high-power, high-efficiency green LEDs.
{"title":"Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes","authors":"D. Feezell, S. Denbaars, J. Speck, S. Nakamura","doi":"10.1109/CSICS07.2007.47","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.47","url":null,"abstract":"This article discusses recent advances of nonpolar and semipolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs). Devices fabricated on these alternative orientations are already beginning to realize significant performance milestones. Nonpolar GaN has been employed to facilitate high-power LEDs and to realize CW operation of novel AlGaN-cladding-free LD structures. Semipolar GaN has also been successfully used to demonstrate LDs and to realize high-power, high-efficiency green LEDs.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133297927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chris Park, A. Edwards, P. Rajagopal, W. Johnson, S. Singhal, A. Hanson, Quinn Martin, E. Piner, K. Linthicum, I. Kizilyalli
GaN-on-Silicon technology is a highly manufacturable, reliable, and cost effective AlGaN/GaN HEMT platform. Maximum RF performance (power and efficiency) can be achieved by addressing two main areas related to the silicon substrate: the RF loss to the silicon substrate and the thermal resistance of the device to the heat sink. In this paper, we will report on how the two areas can be addressed in a realistic environment to enable high power, high voltage operation. This device technology can be used to develop high power amplifiers that are significantly smaller, lighter, and operate over a broad bandwidth.
{"title":"High-Power and High-Voltage AlGaN/GaN HEMTs-on-Si","authors":"Chris Park, A. Edwards, P. Rajagopal, W. Johnson, S. Singhal, A. Hanson, Quinn Martin, E. Piner, K. Linthicum, I. Kizilyalli","doi":"10.1109/CSICS07.2007.11","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.11","url":null,"abstract":"GaN-on-Silicon technology is a highly manufacturable, reliable, and cost effective AlGaN/GaN HEMT platform. Maximum RF performance (power and efficiency) can be achieved by addressing two main areas related to the silicon substrate: the RF loss to the silicon substrate and the thermal resistance of the device to the heat sink. In this paper, we will report on how the two areas can be addressed in a realistic environment to enable high power, high voltage operation. This device technology can be used to develop high power amplifiers that are significantly smaller, lighter, and operate over a broad bandwidth.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133907216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.
{"title":"100-200 GHz CMOS Signal Sources and Detectors","authors":"K. O, C. Cao, E. Seok, S. Sankaran","doi":"10.1109/CSICS07.2007.61","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.61","url":null,"abstract":"The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115262887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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