SiGe-based high-speed ADCs are promising for emerging higher frequency band applications such as coherent optical systems or millimeter-wave radios because of the inherent advantages of high-speed, high integration, and high yield technology. This paper addresses recent developments in high-speed ADCs in SiGe technology. An approach is then presented for development of ultra-high-speed ADCs for the next-generation wired or wireless communication systems.
{"title":"High-Speed Analog-to-Digital Converters in SiGe Technologies","authors":"Jaesik Lee","doi":"10.1109/CSICS07.2007.23","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.23","url":null,"abstract":"SiGe-based high-speed ADCs are promising for emerging higher frequency band applications such as coherent optical systems or millimeter-wave radios because of the inherent advantages of high-speed, high integration, and high yield technology. This paper addresses recent developments in high-speed ADCs in SiGe technology. An approach is then presented for development of ultra-high-speed ADCs for the next-generation wired or wireless communication systems.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116030536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Osmany, F. Herzel, J. Scheytt, K. Schmalz, W. Winkler
We present a fully integrated phase-locked loop tunable from 17.5 GHz to 19.2 GHz fabricated in a 0.25 mum SiGe BiCMOS technology. The measured phase noise is below -110 dBc/Hz at 1 MHz offset over the whole tuning range. Based on an integer-N architecture, the synthesizer consumes 248 mW and occupies a chip area of 2.1 mm including pads. Quadrature outputs at quarter of the oscillator frequency are produced, which are required in a sliding-IF 24 GHz transceiver. Possible applications include wireless LAN as well as satellite communication. The measured phase noise is the lowest among previously published Si-based integrated synthesizers above 12 GHz.
{"title":"An Integrated 19-GHz Low-Phase-Noise Frequency Synthesizer in SiGe BiCMOS Technology","authors":"S. Osmany, F. Herzel, J. Scheytt, K. Schmalz, W. Winkler","doi":"10.1109/CSICS07.2007.44","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.44","url":null,"abstract":"We present a fully integrated phase-locked loop tunable from 17.5 GHz to 19.2 GHz fabricated in a 0.25 mum SiGe BiCMOS technology. The measured phase noise is below -110 dBc/Hz at 1 MHz offset over the whole tuning range. Based on an integer-N architecture, the synthesizer consumes 248 mW and occupies a chip area of 2.1 mm including pads. Quadrature outputs at quarter of the oscillator frequency are produced, which are required in a sliding-IF 24 GHz transceiver. Possible applications include wireless LAN as well as satellite communication. The measured phase noise is the lowest among previously published Si-based integrated synthesizers above 12 GHz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117239527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, a 2.4-GHz low-power LC VCO with high performance in phase noise is designed and implemented in 0.18um CMOS process for IEEE 802. llg WLAN. Based on measurement results, it has the phase noise of -121.11dBc/Hz @lMHz offset from a 2.4GHz carrier. The total power dissipation is only 0.675 mW at 1.2-V power supply voltage. The oscillator is tuned from 2.28 GHz to 2.47 GHz while a tuning voltage varies from 0 V to 1.8 V. Within the author's knowledge, this VCO has the lowest phase noise among the VCOs which consume less-than-1 mW power.
{"title":"A Low-Power CMOS VCO for 2.4GHz WLAN","authors":"H. Choi, Q. Bui, C. Park","doi":"10.1109/CSICS07.2007.42","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.42","url":null,"abstract":"In this paper, a 2.4-GHz low-power LC VCO with high performance in phase noise is designed and implemented in 0.18um CMOS process for IEEE 802. llg WLAN. Based on measurement results, it has the phase noise of -121.11dBc/Hz @lMHz offset from a 2.4GHz carrier. The total power dissipation is only 0.675 mW at 1.2-V power supply voltage. The oscillator is tuned from 2.28 GHz to 2.47 GHz while a tuning voltage varies from 0 V to 1.8 V. Within the author's knowledge, this VCO has the lowest phase noise among the VCOs which consume less-than-1 mW power.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131177384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.
{"title":"Statistical Large-Signal Model Enabling Yield Optimization in High-Power Amplifier Design","authors":"W. Stiebler, Pavlos Kolias, J. Sanctuary","doi":"10.1109/CSICS07.2007.25","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.25","url":null,"abstract":"A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"279 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114487427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Deal, X. Mei, V. Radisic, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, R. Lai
In this paper, an amplifier with a significant amount of gain is demonstrated at sub-millimeter wave frequencies (f > 300-GHz) for the first time. The three stage amplifier uses advanced InP HEMT transistors to realize 16-dB gain at 340-GHz and > 20 dB gain at 280-GHz. The amplifier demonstrates > 100 GHz of bandwidth with gain > 10 dB. This paper demonstrates that full WR-3 waveguide band (220-325 GHz) InP HEMT amplifiers are currently possible and that current device capabilities enable operation well into the sub-millimeter wave regime.
{"title":"Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz","authors":"W. Deal, X. Mei, V. Radisic, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, R. Lai","doi":"10.1109/CSICS07.2007.19","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.19","url":null,"abstract":"In this paper, an amplifier with a significant amount of gain is demonstrated at sub-millimeter wave frequencies (f > 300-GHz) for the first time. The three stage amplifier uses advanced InP HEMT transistors to realize 16-dB gain at 340-GHz and > 20 dB gain at 280-GHz. The amplifier demonstrates > 100 GHz of bandwidth with gain > 10 dB. This paper demonstrates that full WR-3 waveguide band (220-325 GHz) InP HEMT amplifiers are currently possible and that current device capabilities enable operation well into the sub-millimeter wave regime.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125979636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Plouchart, Daiek Kim, Jonghae Kim, V. Karam, C. Plett, Choongyeun Cho, R. Trzcinski
A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90 nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81 GHz at 1.2 V, and a core power of 15.6 mW. The divider can operate down to 0.5 V at a maximum operating frequency of 75.6 GHz with a core power of 2.75 mW.
采用数字90nm SOI CMOS技术制备了带通负载的2:1静态分频器。该分压器在1.2 V时的最大工作频率为81 GHz，核心功率为15.6 mW。该分压器工作电压低至0.5 V，最大工作频率为75.6 GHz，核心功率为2.75 mW。
{"title":"A 1.2V 15.6mW 81GHz 2:1 Static CML Frequency Divider with a Band-Pass Load in a 90nm SOI CMOS Technology","authors":"J. Plouchart, Daiek Kim, Jonghae Kim, V. Karam, C. Plett, Choongyeun Cho, R. Trzcinski","doi":"10.1109/CSICS07.2007.28","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.28","url":null,"abstract":"A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90 nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81 GHz at 1.2 V, and a core power of 15.6 mW. The divider can operate down to 0.5 V at a maximum operating frequency of 75.6 GHz with a core power of 2.75 mW.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122344381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Wide Band Gap Semiconductor for RF Applications (WBGS-RF) program, supported by the Defense Advanced Research Projects Agency (DARPA), is developing microwave and millimeter-wave gallium nitride-based devices on silicon carbide substrates. Recent advances within Phase II of the Program include excellent results for both performance and reliability. Significant progress has been made towards developing manufacturable wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high frequency, high power applications.
{"title":"Recent Advances in GaN-on-SiC HEMT Reliability and Microwave Performance within the DARPA WBGS-RF Program","authors":"M. Rosker","doi":"10.1109/CSICS07.2007.13","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.13","url":null,"abstract":"The Wide Band Gap Semiconductor for RF Applications (WBGS-RF) program, supported by the Defense Advanced Research Projects Agency (DARPA), is developing microwave and millimeter-wave gallium nitride-based devices on silicon carbide substrates. Recent advances within Phase II of the Program include excellent results for both performance and reliability. Significant progress has been made towards developing manufacturable wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high frequency, high power applications.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115659497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.
{"title":"100-200 GHz CMOS Signal Sources and Detectors","authors":"K. O, C. Cao, E. Seok, S. Sankaran","doi":"10.1109/CSICS07.2007.61","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.61","url":null,"abstract":"The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115262887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The compound semiconductor industry, which showed great promise in the 90's, struggled with the disappointment of over supply and commoditization in the "post bubble" period and lost share to improving performance of silicon solutions. Our industry is now re-emerging as a critical technology for achieving the promise of ubiquitous wireless connectivity. While MESFET technology dominated industry volume ten years ago, it now plays an inferior role to HBT and pHEMT. New technologies, such as E/D pHEMT and BiHEMT, are emerging as the future workhorses. These technologies provide greater functionality and performance than their predecessors. At the same time, GaN technology for RF applications has moved from experimental to early commercialization. As our industry matures we are seeing changes in how compound semiconductors are taken to market. High performance packaging is making inroads where MMIC die have been the historical choice. Low-cost modules have become the preferred solution for high volume RF applications. The overall availability of compound semiconductors is consolidating as the supply and demand ratio comes back into balance. It is an exciting time for compound semiconductor development.
{"title":"The Future of Compound Semiconductors","authors":"R. Quinsey","doi":"10.1109/CSICS07.2007.59","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.59","url":null,"abstract":"The compound semiconductor industry, which showed great promise in the 90's, struggled with the disappointment of over supply and commoditization in the \"post bubble\" period and lost share to improving performance of silicon solutions. Our industry is now re-emerging as a critical technology for achieving the promise of ubiquitous wireless connectivity. While MESFET technology dominated industry volume ten years ago, it now plays an inferior role to HBT and pHEMT. New technologies, such as E/D pHEMT and BiHEMT, are emerging as the future workhorses. These technologies provide greater functionality and performance than their predecessors. At the same time, GaN technology for RF applications has moved from experimental to early commercialization. As our industry matures we are seeing changes in how compound semiconductors are taken to market. High performance packaging is making inroads where MMIC die have been the historical choice. Low-cost modules have become the preferred solution for high volume RF applications. The overall availability of compound semiconductors is consolidating as the supply and demand ratio comes back into balance. It is an exciting time for compound semiconductor development.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129597573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rohit Vaidya, Deepak Gupta, Manish Bhakuni, Rupert Prince
In the fast evolving wireless communication market, the need to have a fully integrated RF front end module (FEM) is highly felt where in all the blocks of FEM are on a single chip. For the vendors the reduced firm factor and availability of a complete integrated solution enables rapid market entry and the freedom to focus on value added branding. RF arrays has developed a single chip 802.11b/g FEM in 2.4-2.5-GHz frequency range, which consists of a integrated PA, LNA and SPDT switch with on-chip bias circuits and power detector delivering linear power of 16 dam at 4% EVM for 802.11g having OFDM 54 Mbps data rate and 20 dBm at 1.2% EVM for 802.11b having CCK 11 Mbps data rate. The transmit chain have 28 dB of gain and 23.5 dBm of PI dB. The receive chain have 2.2 dB of noise figure, 14 dBm of P1 dB and 15 dB of gain The quiescent current of PA is 56 mA in TX path while LNA is 8 mA in receive path and packaged in 3 times 3 times 0.7 mm3 16 pin QFN.
{"title":"A Miniature Low Current Fully Integrated Front End Module for WLAN 802.11b/g Applications","authors":"Rohit Vaidya, Deepak Gupta, Manish Bhakuni, Rupert Prince","doi":"10.1109/CSICS07.2007.51","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.51","url":null,"abstract":"In the fast evolving wireless communication market, the need to have a fully integrated RF front end module (FEM) is highly felt where in all the blocks of FEM are on a single chip. For the vendors the reduced firm factor and availability of a complete integrated solution enables rapid market entry and the freedom to focus on value added branding. RF arrays has developed a single chip 802.11b/g FEM in 2.4-2.5-GHz frequency range, which consists of a integrated PA, LNA and SPDT switch with on-chip bias circuits and power detector delivering linear power of 16 dam at 4% EVM for 802.11g having OFDM 54 Mbps data rate and 20 dBm at 1.2% EVM for 802.11b having CCK 11 Mbps data rate. The transmit chain have 28 dB of gain and 23.5 dBm of PI dB. The receive chain have 2.2 dB of noise figure, 14 dBm of P1 dB and 15 dB of gain The quiescent current of PA is 56 mA in TX path while LNA is 8 mA in receive path and packaged in 3 times 3 times 0.7 mm3 16 pin QFN.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126459359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：