Y. Harada, K. Eriguchi, M. Niwa, T. Watanabe, I. Ohdomari
{"title":"Impacts of strained SiO/sub 2/ on TDDB lifetime projection","authors":"Y. Harada, K. Eriguchi, M. Niwa, T. Watanabe, I. Ohdomari","doi":"10.1109/VLSIT.2000.852831","DOIUrl":null,"url":null,"abstract":"We clarify the effects of the strained-SiO/sub 2/ on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (/spl beta/) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO/sub 2/ changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T/sub pd/ and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (/spl sim/115/spl deg/) for the 2 nm-thick SiO/sub 2//Si system.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
We clarify the effects of the strained-SiO/sub 2/ on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (/spl beta/) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO/sub 2/ changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T/sub pd/ and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (/spl sim/115/spl deg/) for the 2 nm-thick SiO/sub 2//Si system.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
