{"title":"Impact of Al+ implantation on the Switching Characteristics of Al2O3/La2O3/Al2O3 multilayer RRAM devices","authors":"Hongxia Liu, Xing Wang","doi":"10.1109/ICICDT.2019.8790907","DOIUrl":null,"url":null,"abstract":"Resistive Random Access Memory (RRAM) devices were designed using Al<inf>2</inf>O<inf>3</inf>/La<inf>2</inf>O<inf>3</inf>/Al<inf>2</inf>O<inf>3</inf> multilayer structure grown by atomic layer deposition as functional layers. The impact of Al<sup>+</sup> ions implantation on the resistive switching performances was investigated. Compared with the control sample, the Al<sup>+</sup> implanted devices exhibit significantly enhanced memory performances including the forming-free behavior, improved uniformity, stability, enlarged ON/OFF resistance ratio, and good data retention characteristics. The stable resistive switching behavior with an acceptable resistance ratio enable the Al<sup>+</sup> implanted Al<inf>2</inf>O<inf>3</inf>/La<inf>2</inf>O<inf>3</inf>/Al<inf>2</inf>O<inf>3</inf> multilayer RRAM device for its application in the future nonvolatile memory devices.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2019.8790907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Resistive Random Access Memory (RRAM) devices were designed using Al2O3/La2O3/Al2O3 multilayer structure grown by atomic layer deposition as functional layers. The impact of Al+ ions implantation on the resistive switching performances was investigated. Compared with the control sample, the Al+ implanted devices exhibit significantly enhanced memory performances including the forming-free behavior, improved uniformity, stability, enlarged ON/OFF resistance ratio, and good data retention characteristics. The stable resistive switching behavior with an acceptable resistance ratio enable the Al+ implanted Al2O3/La2O3/Al2O3 multilayer RRAM device for its application in the future nonvolatile memory devices.
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