H. Kurakake, T. Uchida, T. Higashi, S. Ogita, M. Kobayashi
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引用次数: 4
Abstract
The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.
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