High-Transmittance SiC Membrane Prepared By ECR Plasma CVD In Combination With Rapid Thermal Annealing

K. Song, Don-Hee Lee, Y. Jeon, Chil-Keun Park, H. Noh, Seungyoon Lee, Taeho Lee, Jungsoon Kang, Jinho Ahn
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Abstract

o f Sic as a membrane is aimed to meet stoichiometric composition. Non composition degrades fi lm quality lower elastic modulus, degradation of st3bility, poor optical transmittance, and vulnerability to radiation damage (4). stoichiometric Sic film is achieved with SiH,/CH, ratio of 0.4 a t 500W power, 600°C deposition temperature and this is verified by comparison of profile with Sic single crystal's (Fig. 1). So development of Sic membrane
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ECR等离子体CVD与快速热退火相结合制备高透射率SiC膜
Sic作为膜的目的是满足化学计量组成。无组分导致薄膜质量下降,弹性模量降低,稳定性下降,光学透射率差,易受辐射损伤(4)。在SiH,/CH,比值为0.4 a / 500W功率,600℃沉积温度下获得化学计量Sic薄膜,并通过与Sic单晶的剖面对比(图1)验证了这一点
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