M. Kwon, Sungmin Hwang, Myung-Hyun Baek, Seongjae Cho, Byung-Gook Park
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引用次数: 4
Abstract
In this work, we investigate the dual gate positive feedback field-effect transistor (FBFET) using DC and transient TCAD simulation. I-V characteristics, subthreshold swing, and transient characteristics are analyzed. The FBFET has steep switching property and low off current. We design an inverter that can low power operate with the FBFET. By using the FBFET, the stand-by current is effectively suppressed in analog circuit.
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