All-optical switch using InAs quantum dots in a vertical cavity

C. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, K. Akahane
{"title":"All-optical switch using InAs quantum dots in a vertical cavity","authors":"C. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, K. Akahane","doi":"10.1109/ICIPRM.2010.5516072","DOIUrl":null,"url":null,"abstract":"We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability over 30 nm. By compared to the theoretical design, the absorption strength of QD layers within the cavity has been determined.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability over 30 nm. By compared to the theoretical design, the absorption strength of QD layers within the cavity has been determined.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
在垂直腔中使用InAs量子点的全光开关
我们首次研究了在垂直腔结构中使用自组装的InAs/GaAs量子点(QDs)的全光开关。利用非对称腔优化了量子点开关的光学非线性,实现了最大的差分反射率。通过量子点激发态的光开关表现出时间常数低至23 ps的快速衰减和超过30 nm的波长可调性。通过与理论设计的比较,确定了腔内量子点层的吸收强度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region Synthesis of cubic-GaN nanoparticles using the Na flux method: A novel use for the ultra-high pressure apparatus Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers Low driving voltage spatial light modulator fabricated by ultrahigh-purity GaAs Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1