Analysis of Hall Factor in Isotropic Polysilicon

Abstract

A model of isotropic polycrystal is proposed. All crystallites are regarded as spheres having the same diameter d. The distance between the centers of the spheres cannot be less than d. The distribution of the centers of the crystallites in the polycrystal is described by the radial distribution function given by the rigid spheres model. In the framework of the model the charge carriers relaxation time τbon potential barriers, taking place at the surfaces of the crystallites, is dependent only on energy ε of the charge carrier (τb= τb(ε)). The calculation of the Hall-factor caused by the scattering on the potential barriers in the polycrystalline silicon is presented.