{"title":"5 watt high efficiency wideband 7 to 11 GHz HBT MMIC power amplifier","authors":"J. Komiak, L.W. Yang","doi":"10.1109/MCS.1995.471000","DOIUrl":null,"url":null,"abstract":"A fully monolithic HBT power amplifier that has established new benchmarks for bandwidth and efficiency at X-band is reported. Power-added efficiencies of 56% max/38% min/44.4% average across 7 to 11 GHz are the highest X-band efficiencies and widest bandwidth reported for MMIC HPA's. These amplifiers have demonstrated high power levels (up to 7.3 watts) with high gain (11 to 14.1 dB) under thermally challenging long pulse (500 /spl mu/sec) high duty cycle (25%) conditions. The amplifiers were fabricated using an advanced re-aligned AlGaAs/GaAs power HBT process with a plated bathtub heat sink.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"152 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.471000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
A fully monolithic HBT power amplifier that has established new benchmarks for bandwidth and efficiency at X-band is reported. Power-added efficiencies of 56% max/38% min/44.4% average across 7 to 11 GHz are the highest X-band efficiencies and widest bandwidth reported for MMIC HPA's. These amplifiers have demonstrated high power levels (up to 7.3 watts) with high gain (11 to 14.1 dB) under thermally challenging long pulse (500 /spl mu/sec) high duty cycle (25%) conditions. The amplifiers were fabricated using an advanced re-aligned AlGaAs/GaAs power HBT process with a plated bathtub heat sink.<>
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