A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology

M. Hossain, M. Eissa, M. Hrobak, D. Stoppel, N. Weimann, A. Malignaggi, A. Mai, D. Kissinger, W. Heinrich, V. Krozer
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引用次数: 1

Abstract

This paper presents a W -band hetero-integrated transmitter module using InP-on-BiCMOS technology. It consists of a Phase Locked Loop (PLL) in 0.25 μm BiCMOS technology and a frequency multiplier followed by a double-balanced Gilbert mixer cell in 0.8 μm InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level BCB bonding process. The PLL operates from 45 GHz to 47 GHz and the module achieves a measured single sideband (SSB) power conversion loss of 20 dB and 22 dB at 88 GHz and 95 GHz, respectively, limited by the output power from the PLL source. The entire circuit consumes 434 mW DC power. The chip area of the module is 2.5×1.3 mm2, To the knowledge of the authors, this is the first complex hetero-Integrated module reported so far.
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基于InP-on-BiCMOS技术的w波段异质集成发射模块
本文提出了一种采用InP-on-BiCMOS技术的W波段异质集成发射机模块。它由一个0.25 μm BiCMOS技术的锁相环(PLL)和一个倍频器组成,随后是一个0.8 μm InP-HBT技术的双平衡Gilbert混频器单元,该单元集成在BiCMOS MMIC之上,采用晶圆级BCB键合工艺。锁相环的工作频率为45 GHz至47 GHz,受锁相环源输出功率的限制,该模块在88 GHz和95 GHz频段分别实现了20 dB和22 dB的实测单边带(SSB)功率转换损耗。整个电路消耗434兆瓦的直流功率。该模块的芯片面积为2.5×1.3 mm2,据作者所知,这是迄今为止报道的第一个复杂的异质集成模块。
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