Solution processed OTFTs with 1 cm/sup 2//V-s mobility

C. Kuo, M. Payne, J. Anthony, T. Jackson
{"title":"Solution processed OTFTs with 1 cm/sup 2//V-s mobility","authors":"C. Kuo, M. Payne, J. Anthony, T. Jackson","doi":"10.1109/DRC.2004.1367900","DOIUrl":null,"url":null,"abstract":"This work presents fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl thienyl pentacene (TES thienyl pentacene) with 1 cm/sup 2//V-s field-effect mobility. The devices also have an on/off current ratio >10/sup 7/ and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution processed OTFTs demonstrated to date and the first with performance comparable to thermally evaporated pentacene devices.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This work presents fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl thienyl pentacene (TES thienyl pentacene) with 1 cm/sup 2//V-s field-effect mobility. The devices also have an on/off current ratio >10/sup 7/ and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution processed OTFTs demonstrated to date and the first with performance comparable to thermally evaporated pentacene devices.
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溶液处理OTFTs具有1 cm/sup 2/ V-s的迁移率
本文提出了一种基于三乙基硅乙基噻吩并五烯(TES噻吩并五烯)的溶液加工有机薄膜晶体管(OTFTs),其场效应迁移率为1 cm/sup 2/ V-s。该器件还具有开/关电流比bbb10 /sup 7/和亚阈值斜率接近1 V/ 10年。据我们所知,这是迄今为止证明的迁移率最高的解决方案处理的otft,也是第一个性能可与热蒸发五苯器件相媲美的器件。
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