A Si-Doped High-Performance WOx Resistance Memory Using a Novel Field-Enhanced Structure

Abstract

We developed a simple structure that can enhance the local electric field thus reduce the forming and SET/RESET operation voltage for WOx ReRAM. Si-doped W film is used to further increase the initial resistance and improve the reliability properties. TCAD simulation shows that the field enhanced structure provides an equivalent electrical field that would only be achieved by very small conventional W plug ~ 10nm in size. Thus our novel but simple structure can provide the benefit of deep scaled device without expensive advanced lithography, and with better performance and reliability of larger devices. Furthermore,Si-doping provides an additional knob that allows resistance tuning to optimize the cell and array performance. The 1T1R memory array is well controlled and MLC operation can be reliably achieved by constant current RESET with logic states determined by cumulative RESET pulse duration.