Xubo Song, Yuangang Wang, Zhihong Feng, Y. Lv, Yamin Zhang, Lisen Zhang, S. Liang, X. Tan, S. Dun, Dabao Yang, Zhirong Zhang
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引用次数: 1
Abstract
We presented a GaN Schottky diode model with consideration of self-heating effect of devices in operation. The impact of diode chip temperature on the current and capacitance was taken into account in this model. The thermal resistance of diode chip was extracted by simulation combined measurement to calculate the temperature of Schottky junction with different pumping power. Advantages of established device model in the design of a 220GHz frequency doubler were presented in the end.
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