An Analytical Model for doping effect in charge-plasma-based TFET

Abstract

In this paper, an analytical model for electrostatic doping effect in the charge-plasma-based TFET (CP-TFET) is proposed by solving Poisson's equation incorporating the mobile charge term. Closed forms of vertical potential and electrostatic doping concentration in CP-TFETs are developed. Meanwhile, the impacts of the electrode work functions and substrate thicknesses on them are analyzed. This predicted electrostatic doping concentration agrees well with the Sentaurus TCAD simulation results of the CP-TFET.