Body bias effect of GaN schottky barrier MOSFET with ITO source/drain

Abstract

We fabricated GaN SB-MOSFET using the ITO source/drain and gate with very high drain current and low threshold voltage. Furthermore, we tried to check the body bias effect of the GaN SB-MOSFET after forming the ohmic contact to the substrate. We could control threshold voltage by body bias that makes the device more useful. It is applicable to many of electric circuit applications such as logic gate, memory cell transistors, and image sensors, which are potential area for digital GaN UV optoelectronics.