Extreme High Aspect Ratio RDL Patterning with Low Temperature Curable Polyimide using Double Patterning Technology

Atsushi Nakamura, T. Koizumi, Naoki Sato, Toshihide Aoshima, Michihiro Ogawa, Daisuke Asakawa, Yuki Sakamoto, H. Noguchi
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Abstract

In this paper, extreme high aspect ratio RDL patterning technologies using double patterning technology and low temperature curable polyimide is demonstrated. The extreme high aspect ratio patterning is realized by combination of 1st and 2nd patterning before curing, and was used to successfully form both trench and via patterns, as well as combination of via and trench. The aspect ratio was measured by cross-sectional observation of the resulting pattern using an electron microscope, and was found to be over 8 after curing. Finally, a PI film was formed using the double patterning technology, and a single curing step was applied to obtain a permanent film, with reliability evaluation performed using biased HAST and HTS test. Furthermore, the elongation at break and modulus were measured through stress-strain curve. The results of biased HAST and HTS, as well as mechanical property measurements, are promising. The PI permanent film formed by double patterning and obtained by single curing is homogenized, passes the reliability evaluation, and can be applied to actual devices.
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低温固化聚酰亚胺双模技术的超高纵横比RDL模
本文介绍了利用双模技术和低温固化聚酰亚胺的超高纵横比RDL模化技术。通过固化前的第一次和第二次图案组合实现了超高纵横比的图案,并成功地形成了沟槽和通孔图案,以及通孔和沟槽的组合。利用电子显微镜对所得到的图案进行横断面观察来测量纵横比,发现固化后纵横比大于8。最后,采用双模技术形成PI膜,采用单一固化步骤获得永久膜,并采用偏置HAST和HTS测试进行可靠性评估。通过应力-应变曲线测量了断裂伸长率和模量。偏置HAST和HTS的结果以及力学性能测量都是有希望的。经双图像化、单固化得到的PI永膜均质化,通过了可靠性评估,可应用于实际器件。
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