{"title":"Design and analysis of two-dimensional InAlAs/InGaAs Single Hetero-junction Bipolar Transistor","authors":"H. Nawaz, M. Rizwan","doi":"10.1109/IBCAST.2013.6512182","DOIUrl":null,"url":null,"abstract":"The paper presents an InAlAs/InGaAs Hetero-junction Bi-polar transistor structure. The structure formation and performance analysis has been carried out using SILVACO software. Parametric analysis is carried out and results are presented in correspondence with the theory. Doping profile of proposed HBT is optimized to achieve appropriate current gain and maintain possibly low resistance in the base region to avoid recombination. Emitter area of 5×5 μm2 is used to achieve low off set voltage and high gain of 62dB while low doping enabled the device to operate effectively at high frequencies that is up-till 80GHz. Energy band diagram and effects of different layers are discussed showing efficient workability of the proposed structure.","PeriodicalId":276834,"journal":{"name":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IBCAST.2013.6512182","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper presents an InAlAs/InGaAs Hetero-junction Bi-polar transistor structure. The structure formation and performance analysis has been carried out using SILVACO software. Parametric analysis is carried out and results are presented in correspondence with the theory. Doping profile of proposed HBT is optimized to achieve appropriate current gain and maintain possibly low resistance in the base region to avoid recombination. Emitter area of 5×5 μm2 is used to achieve low off set voltage and high gain of 62dB while low doping enabled the device to operate effectively at high frequencies that is up-till 80GHz. Energy band diagram and effects of different layers are discussed showing efficient workability of the proposed structure.
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