D. Tsiulyanu, G. Golban, E. Kolomeyko, N. Gumeniuc, O. Melnic, S. Marian
{"title":"Dimorphite based UV detectors","authors":"D. Tsiulyanu, G. Golban, E. Kolomeyko, N. Gumeniuc, O. Melnic, S. Marian","doi":"10.1109/SMICND.1996.557455","DOIUrl":null,"url":null,"abstract":"Photoelectrical properties of artificial dimorphite allow the fabrication of device structures sensitive to ultraviolet radiation. Photoconductivity spectra of these sensitive structures depend on technology of the film preparation. The result for fabricated of UV sensors are presented including experimental results for UV dosimeter.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Photoelectrical properties of artificial dimorphite allow the fabrication of device structures sensitive to ultraviolet radiation. Photoconductivity spectra of these sensitive structures depend on technology of the film preparation. The result for fabricated of UV sensors are presented including experimental results for UV dosimeter.