Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557471
K.I. Andronik, O.Y. Keloglu, V. Mazur, E.A. Zasavitski
Lead telluride films have been grown on cleaved BaF/sub 2/ substrates by MBE method. Growth process was monitored by RHEED system and the crystal structure of the obtained films was investigated by /spl theta/-2/spl theta/ and grazing angle X-ray tests. Optimal technological regimes are found and a phenomenological theoretical model of the MBE growth process is proposed.
{"title":"Experimental and theoretical investigation of PbTe growth by MBE on (111) BaF/sub 2/ substrates","authors":"K.I. Andronik, O.Y. Keloglu, V. Mazur, E.A. Zasavitski","doi":"10.1109/SMICND.1996.557471","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557471","url":null,"abstract":"Lead telluride films have been grown on cleaved BaF/sub 2/ substrates by MBE method. Growth process was monitored by RHEED system and the crystal structure of the obtained films was investigated by /spl theta/-2/spl theta/ and grazing angle X-ray tests. Optimal technological regimes are found and a phenomenological theoretical model of the MBE growth process is proposed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115317555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557302
H. Zimmermann
The possibilities of standard bipolar, CMOS, and BiCMOS processes with respect to their use for the manufacturing of optoelectronic integrated circuits (OEICs) as optical receivers will be compared. The improvement of the OEIC properties due to process modifications and application examples of silicon receiver OEICs will be further, major points of consideration.
{"title":"Monolithic bipolar-, CMOS-, and BiCMOS-receiver OEICs","authors":"H. Zimmermann","doi":"10.1109/SMICND.1996.557302","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557302","url":null,"abstract":"The possibilities of standard bipolar, CMOS, and BiCMOS processes with respect to their use for the manufacturing of optoelectronic integrated circuits (OEICs) as optical receivers will be compared. The improvement of the OEIC properties due to process modifications and application examples of silicon receiver OEICs will be further, major points of consideration.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122403491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557473
V. Dumitru, E. Cimpoiasu, C. Morosanu, C. Nenu, D. Necsoiu
Hard and adherent AlN layers on glass have been deposited by reactive magnetron sputtering. The deposition rate, the structure and the optical properties have been investigated mainly with respect to possible optical applications.
{"title":"Aluminum nitride films for optical applications","authors":"V. Dumitru, E. Cimpoiasu, C. Morosanu, C. Nenu, D. Necsoiu","doi":"10.1109/SMICND.1996.557473","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557473","url":null,"abstract":"Hard and adherent AlN layers on glass have been deposited by reactive magnetron sputtering. The deposition rate, the structure and the optical properties have been investigated mainly with respect to possible optical applications.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114300151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557458
C. Grigorescu, S. A. Manea, M. Lazarescu, C. Logofatu, T. Necsoiu, T. Boţilă, I. Munteanu
The aim of this paper is to study the influence of power dissipation on the performance of n-type InSb photoconductive detectors for 3-5 /spl mu/m atmospheric window. By providing mainly a convective heat transfer among the elements of the device the power dissipation has been increased to 10 W/cm/sup 2/. An improvement in the spectral detectivity is observed. No enhancement in the total noise is remarked.
{"title":"Optimization of N-type InSb photoconductive detectors","authors":"C. Grigorescu, S. A. Manea, M. Lazarescu, C. Logofatu, T. Necsoiu, T. Boţilă, I. Munteanu","doi":"10.1109/SMICND.1996.557458","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557458","url":null,"abstract":"The aim of this paper is to study the influence of power dissipation on the performance of n-type InSb photoconductive detectors for 3-5 /spl mu/m atmospheric window. By providing mainly a convective heat transfer among the elements of the device the power dissipation has been increased to 10 W/cm/sup 2/. An improvement in the spectral detectivity is observed. No enhancement in the total noise is remarked.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122132542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557315
C. Podaru, C. Bostam, C. Malide, O. Neagoe, Monica Simion, G. Popescu, D. Gargancinc, N. Tzetci
In this paper a miniature, enzyme based, amperometric glucose biosensor is described. A new technology was developed: an Al/sub 2/O/sub 3/ porous anodic film, acting as a cathalytical membrane, assures a better adhesion of the polymeric films which contain the embedded enzyme. The experiments have shown a good linearity (nonlinearity less than 2%) in the range 10-20 mM glucose concentration.
{"title":"An amperometric glucose biosensor","authors":"C. Podaru, C. Bostam, C. Malide, O. Neagoe, Monica Simion, G. Popescu, D. Gargancinc, N. Tzetci","doi":"10.1109/SMICND.1996.557315","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557315","url":null,"abstract":"In this paper a miniature, enzyme based, amperometric glucose biosensor is described. A new technology was developed: an Al/sub 2/O/sub 3/ porous anodic film, acting as a cathalytical membrane, assures a better adhesion of the polymeric films which contain the embedded enzyme. The experiments have shown a good linearity (nonlinearity less than 2%) in the range 10-20 mM glucose concentration.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128611340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557332
F. Ionescu
The paper describes a method for static decomposition of computation and data domains in an image synthesis specialised parallel system, which defines the architecture of the system, with the goal to balance the load, minimise communication overhead, reduce sequential bottleneck and make the system scalable.
{"title":"Global optimisation for parallelism and locality in image synthesis parallel system","authors":"F. Ionescu","doi":"10.1109/SMICND.1996.557332","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557332","url":null,"abstract":"The paper describes a method for static decomposition of computation and data domains in an image synthesis specialised parallel system, which defines the architecture of the system, with the goal to balance the load, minimise communication overhead, reduce sequential bottleneck and make the system scalable.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"327 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124612885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557337
A. Caddemi, F. Di Prima, M. Sannino
Among the frequency-dependent noise parameters F/sub 0/, /spl Gamma//sub 0/ (magnitude and angle) and r/sub n/, the value of F/sub 0/ represents the minimum noise contribution of an active device in absence of any noise mismatch at the device input (which can be obtained at a single frequency), while r/sub n/ is a measure of the noise figure degradation upon departure from the optimum value of the noise source reflection coefficient. As such, the performance of r/sub n/ is of fundamental importance for the circuit designer when a broad-band low-noise amplifier has to be realized. In this paper, a comparative analysis and related comments are presented on the behavior of this noise parameter for different low-noise device types which have been characterized and modeled in our lab over the last ten years.
{"title":"Comparative performance of the equivalent noise resistance of low-noise microwave FETs","authors":"A. Caddemi, F. Di Prima, M. Sannino","doi":"10.1109/SMICND.1996.557337","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557337","url":null,"abstract":"Among the frequency-dependent noise parameters F/sub 0/, /spl Gamma//sub 0/ (magnitude and angle) and r/sub n/, the value of F/sub 0/ represents the minimum noise contribution of an active device in absence of any noise mismatch at the device input (which can be obtained at a single frequency), while r/sub n/ is a measure of the noise figure degradation upon departure from the optimum value of the noise source reflection coefficient. As such, the performance of r/sub n/ is of fundamental importance for the circuit designer when a broad-band low-noise amplifier has to be realized. In this paper, a comparative analysis and related comments are presented on the behavior of this noise parameter for different low-noise device types which have been characterized and modeled in our lab over the last ten years.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130551286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557432
O. Bajdechi, P. Mcnally
A simulation of stress-induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors has been performed. The results prove that this charge does not modify the transistor's behaviour even at high emitter stress. The charge was computed using an analytical model and the simulations have been done using a MEDICI 2-D device simulator, including the heterojunction advanced module.
{"title":"Stress induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors","authors":"O. Bajdechi, P. Mcnally","doi":"10.1109/SMICND.1996.557432","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557432","url":null,"abstract":"A simulation of stress-induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors has been performed. The results prove that this charge does not modify the transistor's behaviour even at high emitter stress. The charge was computed using an analytical model and the simulations have been done using a MEDICI 2-D device simulator, including the heterojunction advanced module.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132631969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557328
M. Grigore, I. Gavat
In this paper we propose a new method for vowel recognition. Using as parameters the first three formants frequencies of a large set of pronunciations, we trained a neural network (Nonlinear Perceptron) which can easily recognise other vowels.
{"title":"Vowel recognition with nonlinear perceptron","authors":"M. Grigore, I. Gavat","doi":"10.1109/SMICND.1996.557328","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557328","url":null,"abstract":"In this paper we propose a new method for vowel recognition. Using as parameters the first three formants frequencies of a large set of pronunciations, we trained a neural network (Nonlinear Perceptron) which can easily recognise other vowels.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116991760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557438
H.J. Luo, C. Yeh, K. Hwang, R. Mendel
MSIM2 is a physical compact model specifically developed for mixed-signal and analog-intensive circuit simulations in deep sub-micron CMOS technologies. MSIM2 separates the drift and diffusion current components as continuous functions in all all operating regions, and shows superior accuracy and continuity in the subthreshold and moderate inversion regions even for second-order derivatives. It has full temperature scalability (-55/spl deg/C to 150/spl deg/C) and geometry scalability (down to 0.25 /spl mu/m in W and L), and uses less parameters than other advanced models. MSIM2 also includes scalable charge and noise models, and has been verified against various processes from around the world.
{"title":"MSIM2: mixed-signal short channel IGFET model for circuit simulations","authors":"H.J. Luo, C. Yeh, K. Hwang, R. Mendel","doi":"10.1109/SMICND.1996.557438","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557438","url":null,"abstract":"MSIM2 is a physical compact model specifically developed for mixed-signal and analog-intensive circuit simulations in deep sub-micron CMOS technologies. MSIM2 separates the drift and diffusion current components as continuous functions in all all operating regions, and shows superior accuracy and continuity in the subthreshold and moderate inversion regions even for second-order derivatives. It has full temperature scalability (-55/spl deg/C to 150/spl deg/C) and geometry scalability (down to 0.25 /spl mu/m in W and L), and uses less parameters than other advanced models. MSIM2 also includes scalable charge and noise models, and has been verified against various processes from around the world.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117238881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：