Capacitance Voltage Characteristics Of Stearic Acid Insulating Films In Mis Devices

1991 Annual Report. Conference on Electrical Insulation and Dielectric Phenomena, Pub Date : 1991-10-20 DOI:10.1109/CEIDP.1991.763967

S. Alam

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Abstract

Fatty acid films may provide a good substitute as dielectric medium for MIS (metal-insulator-semionductor) technology. This paper discusses capacitance vs voltage (C-V) characteristics of metal/stearic acid/semiconductor devices formed on p-type silicon with thin native silicon dioxide (Si/sub 2/) layers. Variable frequency C-V plots display anomalous frequency dispersion in the negative bias voltage region and a reduction of the dispersion in the positive bias region. This can be attributed to the formation of interface states at the SiO/sub 2//stearic acid insulator boundary. C-V characteristics of MIS samples which have been subjected to thermal stress are also discussed. In these studies we have observed both a voltage and capacitance shift with respect to the unstressed specimens. The observed voltage shift is presumably due to the presence of mobile space charges moving to the SiO/sub 2//stearic acid boundary. The shift in capacitance in the stressed samples may have been caused by annealing of stearic acid films when they undergo thermal stress.

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硬脂酸绝缘膜在Mis器件中的电容电压特性

脂肪酸薄膜可以为MIS(金属-绝缘体-半导体)技术提供良好的介电介质替代品。本文讨论了在p型硅上形成的金属/硬脂酸/半导体器件的电容/电压(C-V)特性，并对其进行了研究。可变频率C-V图显示负偏置电压区频率色散异常，而正偏置电压区色散减小。这可以归因于SiO/sub 2/硬脂酸绝缘体边界处界面态的形成。讨论了热应力作用下MIS样品的C-V特性。在这些研究中，我们已经观察到电压和电容的变化相对于无应力的样品。所观察到的电压位移可能是由于移动空间电荷的存在移动到SiO/sub /硬脂酸边界。应力样品中电容的变化可能是由硬脂酸薄膜在经受热应力时的退火引起的。

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1991 Annual Report. Conference on Electrical Insulation and Dielectric Phenomena,

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