V. Ursaki, I. Tiginyanu, V. Ichizli, A. Terletsky, N. Pyshnaya, S. Radautsan
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引用次数: 0
Abstract
The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures T/sub ann/>600/spl deg/C.
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