{"title":"A 11 ppm/°c CMOS current reference circuit with no external components","authors":"Damian Imbrea, N. Cojan","doi":"10.1109/ISSCS.2013.6651190","DOIUrl":null,"url":null,"abstract":"A new CMOS current reference circuit is described. The circuit designed in 65 nm CMOS standard process operates in the temperature range [-40...+130] °C with supply voltage from 2.1 V to 3.0 V. The reference current is 1 μA ± 0.9 nA having a line sensitivity of 0.5 nA/V and 200 dB power supply rejection ratio at low frequencies. No curvature compensation techniques are used. The circuit occupies 0.0091 mm2 silicon area.","PeriodicalId":260263,"journal":{"name":"International Symposium on Signals, Circuits and Systems ISSCS2013","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Signals, Circuits and Systems ISSCS2013","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCS.2013.6651190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A new CMOS current reference circuit is described. The circuit designed in 65 nm CMOS standard process operates in the temperature range [-40...+130] °C with supply voltage from 2.1 V to 3.0 V. The reference current is 1 μA ± 0.9 nA having a line sensitivity of 0.5 nA/V and 200 dB power supply rejection ratio at low frequencies. No curvature compensation techniques are used. The circuit occupies 0.0091 mm2 silicon area.
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