Dae-gyu Park, K. Lim, Heung-Jae Cho, Taeho Cha, Joong-Jung Kim, Jung-Kyu Ko, I. Yeo, J. Park
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引用次数: 17
Abstract
We report the impact of atomic layer deposition (ALD)-TiN on the novel characteristics of the W/TiN/SiO/sub 2//p-Si MOS system. A damage-free direct metal gate was attained using ALD-TiN as manifested by the negligible hysteresis and low interface trap density (D/sub it/) of /spl sim/5/spl times/10/sup 10/ eV/sup -1/cm/sup -2/ near the Si midgap. Gate leakage current level gated with ALD-TiN is remarkably lower than that with physical vapor deposition (PVD)-TiN or poly-Si gate at a similar capacitance equivalent thickness (CET). In addition, ALD-TiN demonstrated highly robust gate oxide reliability with negligible CET variation against high thermal budget, paving the way for the direct metal gate process.
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