{"title":"New challenges on leakage current improvement in tunnel FET by using low-k oxide","authors":"M. Vadizadeh, B. Davaji, M. Fathipour","doi":"10.1109/ASQED.2009.5206282","DOIUrl":null,"url":null,"abstract":"In this paper, we have shown that off-state current in the Tunneling Field Effect Transistor (TFET) can be reduced dramatically by using a low-k oxide and employing gate work function engineering. In order to enhance Ion/Ioff ratio in the TFET, the effect of second gate employing has been investigated, hence using a low-k oxide for the gate near the drain side (Gate2) resulted in omission of fringing field effects. Therefore, the leakage current is decreased. Also a work function engineering method has been employed for the gate near the source (Gate1) to further reduce the off state current.","PeriodicalId":437303,"journal":{"name":"2009 1st Asia Symposium on Quality Electronic Design","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 1st Asia Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASQED.2009.5206282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we have shown that off-state current in the Tunneling Field Effect Transistor (TFET) can be reduced dramatically by using a low-k oxide and employing gate work function engineering. In order to enhance Ion/Ioff ratio in the TFET, the effect of second gate employing has been investigated, hence using a low-k oxide for the gate near the drain side (Gate2) resulted in omission of fringing field effects. Therefore, the leakage current is decreased. Also a work function engineering method has been employed for the gate near the source (Gate1) to further reduce the off state current.
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