{"title":"A new IGBT with a monolithic over-current protection circuit","authors":"Y. Seki, Y. Harada, N. Iwamuro, N. Kumagai","doi":"10.1109/ISPSD.1994.583634","DOIUrl":null,"url":null,"abstract":"A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 36
Abstract
A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit.