K. Sonoda, E. Tsukuda, S. Tsuda, Tomohiro Hayashi, Y. Akiyama, Y. Yamaguchi, T. Yamashita
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引用次数: 1
Abstract
The effect of field enhancement at Fin corners on program characteristics of FinFET Split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed. The program characteristics using source-side injection (SSI) are found to be insensitive to the variation of the curvature radius at Fin corners, which shows the robustness of FinFET SG-MONOS to Fin shape variation inthe fabrication process.
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