Chuanqing Yu, Baifu Zhang, Yi Xiao, Takuo Tanemura, Y. Nakano
{"title":"Comprehensive analysis on electrically pumped metallic cavity lasers","authors":"Chuanqing Yu, Baifu Zhang, Yi Xiao, Takuo Tanemura, Y. Nakano","doi":"10.1109/ICIPRM.2016.7528619","DOIUrl":null,"url":null,"abstract":"We present the design of an electrically pumped metallic cavity laser based on optical, electrical and thermal simulations. By inserting an InAlAs blocking layer, leakage current is effectively suppressed, leading to 50% reduction of threshold current together with better thermal stability. Through combined optical and electrical analyses, the insulation layer thickness is set to be 60 nm, where the device shows optimized overall performance.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We present the design of an electrically pumped metallic cavity laser based on optical, electrical and thermal simulations. By inserting an InAlAs blocking layer, leakage current is effectively suppressed, leading to 50% reduction of threshold current together with better thermal stability. Through combined optical and electrical analyses, the insulation layer thickness is set to be 60 nm, where the device shows optimized overall performance.
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