40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/gaas.2001.964362

A. Kurdoghlian, M. Mokhtari, C. Fields, M. Wetzel, M. Sokolich, M. Micovic, S. Thomas, B. Shi, M. Sawins

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引用次数: 13

Abstract

A fully integrated and differential AlInAs/InGaAs HBT voltage controlled oscillator (VCO) with wide tuning range was demonstrated for 40 GHz wireless and optical communication applications. To our knowledge, this 40 GHz IC is the highest frequency fundamental mode fully integrated and differential VCO with wide tuning range ever reported. This VCO delivers a typical differential output power of +5 dBm at a center frequency of 39 GHz with a tuning range of up to 3.5 GHz. Co-planar waveguide (CPW) circuit designs has been employed for the development of the InP HBT MMIC VCOs to reduce chip cost and make them flip chip compatible. The measured phase noise shows -95 dBc/Hz at 1 MHz offset and -75 dBc/Hz at 100 KHz offset. The VCO was realized in a high yield optical lithography triple mesa HBT process. Circuit performance was relatively insensitive to process variation indicating a highly robust circuit design and process.

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40ghz全集成差分单片压控振荡器，具有宽调谐范围的AlInAs/InGaAs HBT

一种具有宽调谐范围的全集成差分AlInAs/InGaAs HBT压控振荡器(VCO)，用于40ghz无线和光通信应用。据我们所知，这款40 GHz IC是有史以来报道的频率最高的基模完全集成和差分压控振荡器，具有宽调谐范围。该VCO在39 GHz的中心频率下提供+5 dBm的典型差分输出功率，调谐范围高达3.5 GHz。共面波导(CPW)电路设计被用于InP HBT MMIC压控振荡器的开发，以降低芯片成本并使其倒装兼容。测量的相位噪声在1mhz偏移时为-95 dBc/Hz，在100khz偏移时为-75 dBc/Hz。VCO是在高成品率光刻三台面HBT工艺中实现的。电路性能对工艺变化相对不敏感，表明电路设计和工艺高度稳健。

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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