J. Seo, U. Hommerich, M. Thaik, J. MacKenzie, C. R. Abernathy, J. Zavada
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引用次数: 0
Abstract
GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.
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