G. Calin, M. Irimia, C. Scarlat, M. Purica, F. Comanescu, F. Iacomi
{"title":"Synthesis and characterization of nickel cobalt oxide thin films","authors":"G. Calin, M. Irimia, C. Scarlat, M. Purica, F. Comanescu, F. Iacomi","doi":"10.1109/SMICND.2010.5650627","DOIUrl":null,"url":null,"abstract":"p-Type transparent and conductive cobalt-nickel oxide films of 130 nm thickness, have been deposited by spin coating method on glass substrates. The electrical and optical properties of the oxides have been studied as a function of the x=Co/(Co+Ni) ratio. A combination of x-ray diffraction, x-ray photoelectron spectroscopy and Raman spectroscopy was used in order to investigate thin film structures. Thin films of mixed oxides: NiCo2O4, Ni1.71 Co1.29 O4; NiO were obtained for x>0.60. The electrical conductivity of these films reaches a maximum conductivity at this stoichiometry.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2010 Proceedings (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2010.5650627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
p-Type transparent and conductive cobalt-nickel oxide films of 130 nm thickness, have been deposited by spin coating method on glass substrates. The electrical and optical properties of the oxides have been studied as a function of the x=Co/(Co+Ni) ratio. A combination of x-ray diffraction, x-ray photoelectron spectroscopy and Raman spectroscopy was used in order to investigate thin film structures. Thin films of mixed oxides: NiCo2O4, Ni1.71 Co1.29 O4; NiO were obtained for x>0.60. The electrical conductivity of these films reaches a maximum conductivity at this stoichiometry.