Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650746
R. Malmqvist, C. Samuelsson, B. Carlegrim, P. Rantakari, T. Vaha-Heikkila, A. Rydberg, J. Varis
Low-loss millimetre-wave RF MEMS phase shifters made on quartz are assessed with respect to a Ka-band low-power multifunctional radar sensor application. A loaded line type of phase shifter circuit presents a phase shift of 22.3° and a loss of 0.4 dB at 35 GHz. A switched line phase shifter gives 187° of phase shift and 1.5 dB of loss at 30 GHz (i.e. a FoM=122°/dB). We estimate that a 5-bit loaded line/switched line MEMS phase shifter circuit can achieve a loss of 4 dB at 35 GHz which could reduce by a factor 2 the required transmit DC power level in a Ka-Band energy starved phased array radar system.
{"title":"Ka-band RF MEMS phase shifters for energy starved millimetre-wave radar sensors","authors":"R. Malmqvist, C. Samuelsson, B. Carlegrim, P. Rantakari, T. Vaha-Heikkila, A. Rydberg, J. Varis","doi":"10.1109/SMICND.2010.5650746","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650746","url":null,"abstract":"Low-loss millimetre-wave RF MEMS phase shifters made on quartz are assessed with respect to a Ka-band low-power multifunctional radar sensor application. A loaded line type of phase shifter circuit presents a phase shift of 22.3° and a loss of 0.4 dB at 35 GHz. A switched line phase shifter gives 187° of phase shift and 1.5 dB of loss at 30 GHz (i.e. a FoM=122°/dB). We estimate that a 5-bit loaded line/switched line MEMS phase shifter circuit can achieve a loss of 4 dB at 35 GHz which could reduce by a factor 2 the required transmit DC power level in a Ka-Band energy starved phased array radar system.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123048307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650233
T. Potlog, V. Botnariuc, L. Gorceac, N. Spalatu, N. Maticiuc, S. Raievschi
The CdS-based solar cell heterojunctions (HJ) have been obtained by growth of CdS at relatively lower temperature using the close space sublimation method (CSS). Investigation of the photovoltaic characteristics shows an efficiency of about 12 % for InP/CdS and 9.6 % for CdS/CdTe solar cell HJ. The analysis of the forward dark current-voltage and the capacitance-voltage characteristics indicate a tunnelling recombination current which flows through states near or at the interfaces of a thermal energy of about 0.62 eV for CdS/CdTe and 0.42 eV for InP/CdS solar cell heterojunctions. The solar energy conversion efficiency is influenced by the interface states through the open circuit voltage and the fill factor.
{"title":"The caracterization of the CdS-based solar cell heterojunctions","authors":"T. Potlog, V. Botnariuc, L. Gorceac, N. Spalatu, N. Maticiuc, S. Raievschi","doi":"10.1109/SMICND.2010.5650233","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650233","url":null,"abstract":"The CdS-based solar cell heterojunctions (HJ) have been obtained by growth of CdS at relatively lower temperature using the close space sublimation method (CSS). Investigation of the photovoltaic characteristics shows an efficiency of about 12 % for InP/CdS and 9.6 % for CdS/CdTe solar cell HJ. The analysis of the forward dark current-voltage and the capacitance-voltage characteristics indicate a tunnelling recombination current which flows through states near or at the interfaces of a thermal energy of about 0.62 eV for CdS/CdTe and 0.42 eV for InP/CdS solar cell heterojunctions. The solar energy conversion efficiency is influenced by the interface states through the open circuit voltage and the fill factor.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125068205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650417
S. Peteu
A fresh perspective of bio-inspired engineering is applied to emerging concepts, designs, applications in the area of responsive delivery of countermeasures. In particular, cutting edge, broad impact applications are examined, such as nanorobotics or integrated sensing-actuating functions down to nano-scale. These can be used towards the recognitive release of therapeutic agents. The ideas and concepts expressed are fertilized with a biomimetic twist, thereby leveraging nature's million years of sustainable evolution. Moreover, a radically new look is emphasized: of the hierarchically multi-level integrated self-healed biosystems that shall emulate positive revolutionary changes for the future bio-inspired, smart therapies with personalized, design.
{"title":"Micro-to nano-biosensors and actuators integrated for responsive delivery of countermeasures","authors":"S. Peteu","doi":"10.1109/SMICND.2010.5650417","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650417","url":null,"abstract":"A fresh perspective of bio-inspired engineering is applied to emerging concepts, designs, applications in the area of responsive delivery of countermeasures. In particular, cutting edge, broad impact applications are examined, such as nanorobotics or integrated sensing-actuating functions down to nano-scale. These can be used towards the recognitive release of therapeutic agents. The ideas and concepts expressed are fertilized with a biomimetic twist, thereby leveraging nature's million years of sustainable evolution. Moreover, a radically new look is emphasized: of the hierarchically multi-level integrated self-healed biosystems that shall emulate positive revolutionary changes for the future bio-inspired, smart therapies with personalized, design.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128376373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649092
M. Suchańska, M. Makrenek, J. Świderski
Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.
讨论了相干相关干涉技术应用于微孔材料拓扑结构研究的可能性。
{"title":"Using the Coherence Correlation Interferometry (CCI) technique for study topography of the C-Ni films deposited on porous silicon","authors":"M. Suchańska, M. Makrenek, J. Świderski","doi":"10.1109/SMICND.2010.5649092","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649092","url":null,"abstract":"Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130413189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650290
A. Muller, G. Konstantinidis, D. Neculoiu, A. Dinescu, M. Andrulidaki, A. Stavrinidis, A. Cismaru, A. Stefanescu, M. Carp, C. Anton, A. Muller, R. Gavrila, D. Dascalu
The paper presents the manufacturing and the characterization of two novel devices on GaN/Si. The first device is a SAW structure for the GHz frequency range manufactured using nanolithografic techniques on GaN. Fingers and intedigits spacing 300nm wide have been successful developed in a single metal PMMA layer. An operating frequency close to 4 GHz has been obtained. For the second device, a membrane supported MSM UV photodetector on GaN, both micromachining techniques and nanolithography have been used. The MSM interdigitated structure of the photodetector had 500nm wide fingers/spacings. A very high responsivity (about 10 A/W for 6V) and the very low dark current (<1pA for V=3V) have been obtained.
{"title":"Micromachining and nanoprocessing of GaN/Silicon for SAW and UV photodetector manufacturing","authors":"A. Muller, G. Konstantinidis, D. Neculoiu, A. Dinescu, M. Andrulidaki, A. Stavrinidis, A. Cismaru, A. Stefanescu, M. Carp, C. Anton, A. Muller, R. Gavrila, D. Dascalu","doi":"10.1109/SMICND.2010.5650290","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650290","url":null,"abstract":"The paper presents the manufacturing and the characterization of two novel devices on GaN/Si. The first device is a SAW structure for the GHz frequency range manufactured using nanolithografic techniques on GaN. Fingers and intedigits spacing 300nm wide have been successful developed in a single metal PMMA layer. An operating frequency close to 4 GHz has been obtained. For the second device, a membrane supported MSM UV photodetector on GaN, both micromachining techniques and nanolithography have been used. The MSM interdigitated structure of the photodetector had 500nm wide fingers/spacings. A very high responsivity (about 10 A/W for 6V) and the very low dark current (<1pA for V=3V) have been obtained.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121626193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650685
S. Sava, Ludmila Iarca, C. Trisca-Rusu, A. Nechifor, Ș. Voicu, G. Nechifor
A new efficient method for TiO2 fucntionalization with different molecules is presented in this paper. The method is based on TiO2 functionalization with lysine, followed by reaction between amino group from lysine and a functional group from another molecule. In this case the reaction was performed with crown ether using cyanuric chloride as spacer. An infra red spectroscopy study was performed in order to characterize the synthesized molecules.
{"title":"New method for TiO2 covalent-ionic functionalization with different molecules for induced properties","authors":"S. Sava, Ludmila Iarca, C. Trisca-Rusu, A. Nechifor, Ș. Voicu, G. Nechifor","doi":"10.1109/SMICND.2010.5650685","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650685","url":null,"abstract":"A new efficient method for TiO2 fucntionalization with different molecules is presented in this paper. The method is based on TiO2 functionalization with lysine, followed by reaction between amino group from lysine and a functional group from another molecule. In this case the reaction was performed with crown ether using cyanuric chloride as spacer. An infra red spectroscopy study was performed in order to characterize the synthesized molecules.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126333705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650688
S. Lazanu, I. Lazanu, G. Iordache, I. Stavarache, A. Lepadatu, A. Slav
The thermal spike model which takes into account both ionization and nuclear energy loss processes of the projectile as distinct electronic and atomic heat sources is used to describe transient processes induced by ions in silicon. The time and space dependencies of the lattice and electron temperatures near the projectile trajectory are calculated. The contribution of the rise in temperature on defect formation and annealing is considered.
{"title":"Study of the interactions of ions in silicon: Transient processes and defect production","authors":"S. Lazanu, I. Lazanu, G. Iordache, I. Stavarache, A. Lepadatu, A. Slav","doi":"10.1109/SMICND.2010.5650688","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650688","url":null,"abstract":"The thermal spike model which takes into account both ionization and nuclear energy loss processes of the projectile as distinct electronic and atomic heat sources is used to describe transient processes induced by ions in silicon. The time and space dependencies of the lattice and electron temperatures near the projectile trajectory are calculated. The contribution of the rise in temperature on defect formation and annealing is considered.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128126454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650639
C. Comeaga, G. Ionascu, E. Manea, A. Sandu, L. Bogatu, D. Besnea
The paper deals with studying the mechanical structure of a bulk-micromachined silicon piezoresistive accelerometer by using FEM (Finite Element Method). The vibration modes (resonant frequencies) and sensitivity were predicted. The results of numerical simulation, validated experimentally have pointed out the influence of manufacturing process parameters on the accelerometer performance.
{"title":"Influence of technological parameters on the dynamic behavior of a MEMS accelerometer","authors":"C. Comeaga, G. Ionascu, E. Manea, A. Sandu, L. Bogatu, D. Besnea","doi":"10.1109/SMICND.2010.5650639","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650639","url":null,"abstract":"The paper deals with studying the mechanical structure of a bulk-micromachined silicon piezoresistive accelerometer by using FEM (Finite Element Method). The vibration modes (resonant frequencies) and sensitivity were predicted. The results of numerical simulation, validated experimentally have pointed out the influence of manufacturing process parameters on the accelerometer performance.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122263604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650263
E. Czerwosz, I. Iwanejko, A. Kamińska, J. Rymarczyk, J. Keczkowska, M. Suchańska, F. Craciunoiu, F. Comanescu
In this paper we present results of structural and topographical studies of C-Ni nanocomposite films with different Ni content. Films were obtained by PVD method. Their structure was investigated by Raman and FTIR spectroscopy and topography by AFM. Typical field emission current from these films is few µA (up to 10 µA) for 3kV anode-cathode voltage and 0.1mm anode-cathode distance.
{"title":"Topography and structure of nanocomposite C-Ni field emitters","authors":"E. Czerwosz, I. Iwanejko, A. Kamińska, J. Rymarczyk, J. Keczkowska, M. Suchańska, F. Craciunoiu, F. Comanescu","doi":"10.1109/SMICND.2010.5650263","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650263","url":null,"abstract":"In this paper we present results of structural and topographical studies of C-Ni nanocomposite films with different Ni content. Films were obtained by PVD method. Their structure was investigated by Raman and FTIR spectroscopy and topography by AFM. Typical field emission current from these films is few µA (up to 10 µA) for 3kV anode-cathode voltage and 0.1mm anode-cathode distance.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115762986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650629
M. Chirita, R. Banica, P. Sfirloaga, A. Ieta, I. Grozescu
We develop an procedure for synthesizing micrometric magnetite crystals after two hours of autoclavation at 250°C by hydrothermal decomposition of Fe- Ethylenediaminetetraacetic acid (Fe-EDTA) complex in the presence of urea starting from Fe (III)-Ferric Ammonium Sulfate (FAS), and Na4EDTA as main precursors. Crystals with 10–15 µm in size (along the <001> axis), were obtained. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy and magnetic measurements were performed to investigate the final product. A low remanent magnetization (5 emu/g) was observed at high level magnetic field intensity (3.8 kOe), emulating superparamagnetic behavior, uncommon for magnetic microparticles at room temperature.
{"title":"A short route of micrometric magnetite synthesis via Fe-EDTA thermal decomposition","authors":"M. Chirita, R. Banica, P. Sfirloaga, A. Ieta, I. Grozescu","doi":"10.1109/SMICND.2010.5650629","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650629","url":null,"abstract":"We develop an procedure for synthesizing micrometric magnetite crystals after two hours of autoclavation at 250°C by hydrothermal decomposition of Fe- Ethylenediaminetetraacetic acid (Fe-EDTA) complex in the presence of urea starting from Fe (III)-Ferric Ammonium Sulfate (FAS), and Na4EDTA as main precursors. Crystals with 10–15 µm in size (along the <001> axis), were obtained. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy and magnetic measurements were performed to investigate the final product. A low remanent magnetization (5 emu/g) was observed at high level magnetic field intensity (3.8 kOe), emulating superparamagnetic behavior, uncommon for magnetic microparticles at room temperature.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114341283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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