R. Majidi-Ahy, M. Riaziat, C. Nishimoto, M. Glenn, S. Silverman, S. Weng, Y. Pao, G. Zdasiuk, S. Bandy, Z. Tan
{"title":"5-100 GHz InP CPW MMIC 7-section distributed amplifier","authors":"R. Majidi-Ahy, M. Riaziat, C. Nishimoto, M. Glenn, S. Silverman, S. Weng, Y. Pao, G. Zdasiuk, S. Bandy, Z. Tan","doi":"10.1109/MCS.1990.110932","DOIUrl":null,"url":null,"abstract":"The development of a single-stage 5-100-GHz InP monolithic microwave IC (MMIC) amplifier with an average gain of more than 5.0 dB is reported. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported for wideband amplifiers. The active devices in this seven-section distributed amplifier are 0.1- mu m mushroom-gate InGaAs-InAlAs lattice-matched HEMTs on a semiinsulating InP substrate. Coplanar waveguide is the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 by 860 mu m. This is the first 100-GHz coplanar waveguide circuit on an InP substrate.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"54","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 54
Abstract
The development of a single-stage 5-100-GHz InP monolithic microwave IC (MMIC) amplifier with an average gain of more than 5.0 dB is reported. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported for wideband amplifiers. The active devices in this seven-section distributed amplifier are 0.1- mu m mushroom-gate InGaAs-InAlAs lattice-matched HEMTs on a semiinsulating InP substrate. Coplanar waveguide is the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 by 860 mu m. This is the first 100-GHz coplanar waveguide circuit on an InP substrate.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
