D. Willems, I. Bahl, M. Pollman, J. Jorgenson, E. Griffin, M. Coluzzi, S. Tantod, C. Andricos
{"title":"Multifunction chip set for T/R module receive path","authors":"D. Willems, I. Bahl, M. Pollman, J. Jorgenson, E. Griffin, M. Coluzzi, S. Tantod, C. Andricos","doi":"10.1109/MCS.1990.110947","DOIUrl":null,"url":null,"abstract":"The design and test results for multifunction monolithic microwave ICs (MMICs) for C-band transmit/receive (T/R) modules are presented. This small-signal chip set contains the entire receive path (5 stages of amplification and 10 passive devices) in just three chips. These ICs, fabricated with the multifunctional self-aligned gate (MSAG) process, demonstrate a high level of integration, excellent performance. and a good yield. The variable-gain low-noise amplifier has a 30+or-1-dB gain, and a 2.5-dB noise figure, the phase shifter single-pole, double-throw (SPDT) switch has an 8+or-1-dB loss, and the buffer amplifier has a 6.5+or-0.2-dB gain and a 3.5-dB noise figure. Average yield for these circuits was 40% or better.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The design and test results for multifunction monolithic microwave ICs (MMICs) for C-band transmit/receive (T/R) modules are presented. This small-signal chip set contains the entire receive path (5 stages of amplification and 10 passive devices) in just three chips. These ICs, fabricated with the multifunctional self-aligned gate (MSAG) process, demonstrate a high level of integration, excellent performance. and a good yield. The variable-gain low-noise amplifier has a 30+or-1-dB gain, and a 2.5-dB noise figure, the phase shifter single-pole, double-throw (SPDT) switch has an 8+or-1-dB loss, and the buffer amplifier has a 6.5+or-0.2-dB gain and a 3.5-dB noise figure. Average yield for these circuits was 40% or better.<>
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