CMOS temperature sensor with built-in ADC

P. Thota, A. K. Mal
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引用次数: 2

Abstract

An area efficient temperature sensor using Ring Oscillator (RO) is proposed. It is basically implemented with two ROs, one being temperature-sensitive and the other temperature-insensitive. Temperature measurement is done in two steps. Initially, temperature-to-time conversion is performed when temperature-sensitive RO is enabled and then time-to-digital conversion is performed when temperature-insensitive RO is enabled. This two step process optimizes the area because only one counter is sufficient. The feedback provision enables only one RO at once, providing low dynamic power dissipation. A True Single-Phase Clock (TSPC) based high speed counter is employed to meet the requirement. It is designed using UMC 0.18 μm CMOS technology with the supply votage of 1.8 V and the simulation results are presented. The proposed sensor is capable of measuring the temperatures from -55° C to 125° C with the resolution of 5.68 LSB/°C. It dissipates 650 μW with the conversion rate of 300K Samples/S and occupying 10.05 μm2.
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内置ADC的CMOS温度传感器
提出了一种基于环形振荡器(RO)的区域高效温度传感器。它基本上是由两个ROs实现的,一个是温度敏感的,另一个是温度不敏感的。温度测量分两步完成。首先使能温度敏感RO时进行温度到时间的转换,然后使能温度不敏感RO时进行时间到数字的转换。这两步过程优化了区域,因为只有一个计数器是足够的。提供反馈,一次只允许一个RO,提供低动态功耗。采用基于真单相时钟(TSPC)的高速计数器来满足这一要求。采用UMC 0.18 μm CMOS工艺设计,电源电压为1.8 V,并给出了仿真结果。该传感器能够测量-55°C至125°C的温度,分辨率为5.68 LSB/°C。损耗为650 μW,转化率为300K Samples/S,占用10.05 μm2。
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