Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522512
K. Chandana, S. Maliye
In multi-core mobile chipsets, when CPU cores are handled through software mechanisms instead of hardware clock gating and power gating, the leakage current i.e. when the cores are active but in idle state, is greater than average expected leakage current. Apart from resulting in power loss, there is a penalty in terms of performance, especially when a user unlocks the device and tries to scroll across the screen, launch an app or rotate the screen. The sudden increase in load leads to sluggish behavior of the device. In this paper, a mechanism is proposed to intelligently enable and disable CPU hotplug based on activities to balance the power and performance of the device. In this solution, the CPU hotplug is disabled for a certain time out period and all the cores are made active so that when the user performs an activity, the sudden load is managed properly. Once the timeout period is over, CPU hotplug is enabled and the cores are then controlled by the governor. The results of this experiment show a significant reduction in leakage power and also results in better performance of the device.
{"title":"Android activity based intelligent hotplug control","authors":"K. Chandana, S. Maliye","doi":"10.1109/MICROCOM.2016.7522512","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522512","url":null,"abstract":"In multi-core mobile chipsets, when CPU cores are handled through software mechanisms instead of hardware clock gating and power gating, the leakage current i.e. when the cores are active but in idle state, is greater than average expected leakage current. Apart from resulting in power loss, there is a penalty in terms of performance, especially when a user unlocks the device and tries to scroll across the screen, launch an app or rotate the screen. The sudden increase in load leads to sluggish behavior of the device. In this paper, a mechanism is proposed to intelligently enable and disable CPU hotplug based on activities to balance the power and performance of the device. In this solution, the CPU hotplug is disabled for a certain time out period and all the cores are made active so that when the user performs an activity, the sudden load is managed properly. Once the timeout period is over, CPU hotplug is enabled and the cores are then controlled by the governor. The results of this experiment show a significant reduction in leakage power and also results in better performance of the device.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127236282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522578
V. Sunnydayal, T. Kumar
In this paper, combination of statistical model based approach and Non-negative matrix factorization (NMF) based approach with on-line update of speech and noise bases for speech enhancement is proposed. Template based approaches are more robust and performs better to non-stationary noises compared to the statistical model based approaches. However, the template based approach is dependent on a priori information. Combining the approaches avoids the drawbacks of both. To improve the performance further, speech and noise bases are adapted simultaneously in NMF approach with the help of the estimated speech presence probability (SPP). The proposed approach yields better results than statistical based approach, NMF based approach and also combination of both approaches without on-line update in non-stationary noise environments.
{"title":"Speech enhancement using β-divergence based NMF with update bases","authors":"V. Sunnydayal, T. Kumar","doi":"10.1109/MICROCOM.2016.7522578","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522578","url":null,"abstract":"In this paper, combination of statistical model based approach and Non-negative matrix factorization (NMF) based approach with on-line update of speech and noise bases for speech enhancement is proposed. Template based approaches are more robust and performs better to non-stationary noises compared to the statistical model based approaches. However, the template based approach is dependent on a priori information. Combining the approaches avoids the drawbacks of both. To improve the performance further, speech and noise bases are adapted simultaneously in NMF approach with the help of the estimated speech presence probability (SPP). The proposed approach yields better results than statistical based approach, NMF based approach and also combination of both approaches without on-line update in non-stationary noise environments.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123275328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522514
A. Ali, Jayaram Nakka
Cascaded H-Bridge (CHB) Multi-Level Inverter (MLI) is widely known for their better performance. This topology is very widely used in renewable applications due to its advantage in the availability of isolated DC links. However, in MLIs the main constraint lies in the usage of switches, so as to avoid the switching losses. But, for the increase of CHBMLI to a next higher level of CHBMLI, the number of switches is mandatorily increased. Hence, remaining the cascaded number to the same value and by the addition of very limited hardware to the existing CHB topology the level of the CHBMLI can be tripled (perspective topology named as "Cascaded Diode Bridge integrated H-Bridge (CDBHB) MLI"). In the amended CHBMLI topology the switching devices are slightly increased. But, still the level of the MLI obtained is doubled for the same number of switching devices. The comparative performance evaluation was performed using extensive simulations in MATLAB Simulink.
{"title":"Improved performance of cascaded multilevel inverter","authors":"A. Ali, Jayaram Nakka","doi":"10.1109/MICROCOM.2016.7522514","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522514","url":null,"abstract":"Cascaded H-Bridge (CHB) Multi-Level Inverter (MLI) is widely known for their better performance. This topology is very widely used in renewable applications due to its advantage in the availability of isolated DC links. However, in MLIs the main constraint lies in the usage of switches, so as to avoid the switching losses. But, for the increase of CHBMLI to a next higher level of CHBMLI, the number of switches is mandatorily increased. Hence, remaining the cascaded number to the same value and by the addition of very limited hardware to the existing CHB topology the level of the CHBMLI can be tripled (perspective topology named as \"Cascaded Diode Bridge integrated H-Bridge (CDBHB) MLI\"). In the amended CHBMLI topology the switching devices are slightly increased. But, still the level of the MLI obtained is doubled for the same number of switching devices. The comparative performance evaluation was performed using extensive simulations in MATLAB Simulink.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117318839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522548
Jagamohan Sahoo, R. Mahapatra
Due to scaling of MOSFET, in this paper we have considered a triple material cylindrical gate all around(TM-CGAA) to study the SCEs and DIBL. An analytical threshold voltage model has also been reported. Center potential based modeling is carried out instead of surface potential for better accuracy.
{"title":"Center potential based threshold voltage modelling of TM-CGAA MOSFET","authors":"Jagamohan Sahoo, R. Mahapatra","doi":"10.1109/MICROCOM.2016.7522548","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522548","url":null,"abstract":"Due to scaling of MOSFET, in this paper we have considered a triple material cylindrical gate all around(TM-CGAA) to study the SCEs and DIBL. An analytical threshold voltage model has also been reported. Center potential based modeling is carried out instead of surface potential for better accuracy.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134525976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522579
G. Kumar, V. Sandeepkumar, S. Anuradha
Offset Quadrature Amplitude Modulation based Orthogonal frequency Division Multiplexing OQAM/OFDM has emerged as exciting technologies to solve the spectrum scarcity in future cellular networks. In this paper, statistical analysis is presented for Non-Contiguous Offset Quadrature Amplitude Modulation based Frequency Division Multiplexing (NC-OQAM/OFDM) signals for Peak to Average Power Ratio. When studying contiguous OQAM/OFDM signals, we analyze the high PAPR of NC-OFDM/OQAM signals to achieve high power efficiency. Most of the symbols are identically and independently distributed (i.i.d), when studying contiguous OQAM/OFDM signals. However, in an NC-OQAM/OFDM transmission, where a large number of subcarriers could be deactivated, this assumption is no longer valid. The proposed PAPR analysis is derived specifically for the NCOQAM/OFDM transmission scenario. Results show that NCOQAM/OFDM signal exhibit higher PAPR values relative to contiguous OQAM/OFDM transmission at the same information rate.
{"title":"Peak-to-average power ratio analysis for NC-OQAM/OFDM transmissions","authors":"G. Kumar, V. Sandeepkumar, S. Anuradha","doi":"10.1109/MICROCOM.2016.7522579","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522579","url":null,"abstract":"Offset Quadrature Amplitude Modulation based Orthogonal frequency Division Multiplexing OQAM/OFDM has emerged as exciting technologies to solve the spectrum scarcity in future cellular networks. In this paper, statistical analysis is presented for Non-Contiguous Offset Quadrature Amplitude Modulation based Frequency Division Multiplexing (NC-OQAM/OFDM) signals for Peak to Average Power Ratio. When studying contiguous OQAM/OFDM signals, we analyze the high PAPR of NC-OFDM/OQAM signals to achieve high power efficiency. Most of the symbols are identically and independently distributed (i.i.d), when studying contiguous OQAM/OFDM signals. However, in an NC-OQAM/OFDM transmission, where a large number of subcarriers could be deactivated, this assumption is no longer valid. The proposed PAPR analysis is derived specifically for the NCOQAM/OFDM transmission scenario. Results show that NCOQAM/OFDM signal exhibit higher PAPR values relative to contiguous OQAM/OFDM transmission at the same information rate.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114448169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522441
Dhriti Duggal, Rajnish Sharma
In this review paper, various articles published in the last few years related to analytical models for Short Channel Effects (SCEs) in MOSFETS have been reviewed. In the first half of the paper, single gate MOSFET models have been examined which have been broadly classified into five categories namely a) charge sharing models, b) empirical SCE models, c) polynomial potential models, d) analytical models to 2-D Poisson's equation and e) voltage doping transformation (VDT) models. Limitations of the various available models in these categories have been highlighted. In the second half of the paper double gate MOSFET models based on a) 1-D Poisson's Equation b) 2-D Poisson's Equation and c) voltage doping transformation (VDT) have been detailed along with the limitations of each of these.
{"title":"Review article on analytical models for single gate and double gate MOSFETs in subthreshold regime","authors":"Dhriti Duggal, Rajnish Sharma","doi":"10.1109/MICROCOM.2016.7522441","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522441","url":null,"abstract":"In this review paper, various articles published in the last few years related to analytical models for Short Channel Effects (SCEs) in MOSFETS have been reviewed. In the first half of the paper, single gate MOSFET models have been examined which have been broadly classified into five categories namely a) charge sharing models, b) empirical SCE models, c) polynomial potential models, d) analytical models to 2-D Poisson's equation and e) voltage doping transformation (VDT) models. Limitations of the various available models in these categories have been highlighted. In the second half of the paper double gate MOSFET models based on a) 1-D Poisson's Equation b) 2-D Poisson's Equation and c) voltage doping transformation (VDT) have been detailed along with the limitations of each of these.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"52 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124079953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522413
A. Bhattacharya, B. Roy, M. Islam, S. Chowdhury, A. Bhattacharjee
An Ultra Wide-Band Monopole Antenna with Hexagonal Patch Structure is designed for several wide-band microwave band applications in the X-band (8-12 GHz), Ku-band (12-18 GHz) of the Radio Frequency Spectrum. The patch is designed using Ring Geometry. The antenna design is optimized using Particle Swarm Optimization (PSO) technique. The proposed antenna finds its application in microwave frequency spectrum from 7.5 GHz to 20 GHz. The antenna gain is 3.4 dB at 8 GHz, 4.4 dB at 10 GHz, 5.0 dB at 12 GHz, 5.2 dB at 15 GHz, 3.6 dB at 18 GHz, 4.0 dB at 20 GHz respectively. The proposed antenna shows an ultra wide bandwidth of 12.5 GHz (7.5 GHz to 20 GHz).
{"title":"An UWB Monopole antenna with hexagonal patch structure designed using particle swarm optimization algorithm for wireless applications","authors":"A. Bhattacharya, B. Roy, M. Islam, S. Chowdhury, A. Bhattacharjee","doi":"10.1109/MICROCOM.2016.7522413","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522413","url":null,"abstract":"An Ultra Wide-Band Monopole Antenna with Hexagonal Patch Structure is designed for several wide-band microwave band applications in the X-band (8-12 GHz), Ku-band (12-18 GHz) of the Radio Frequency Spectrum. The patch is designed using Ring Geometry. The antenna design is optimized using Particle Swarm Optimization (PSO) technique. The proposed antenna finds its application in microwave frequency spectrum from 7.5 GHz to 20 GHz. The antenna gain is 3.4 dB at 8 GHz, 4.4 dB at 10 GHz, 5.0 dB at 12 GHz, 5.2 dB at 15 GHz, 3.6 dB at 18 GHz, 4.0 dB at 20 GHz respectively. The proposed antenna shows an ultra wide bandwidth of 12.5 GHz (7.5 GHz to 20 GHz).","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128209812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522535
Shreedeep Gangopadhyay, Molay Kumar Mondal
The Internet of Things (IoT) is one of the major technological trends which is utilized to monitor natural and human made resources to help in predicting and detecting exigence events like flood, fire, gas and water leak that can pose an intimidation to human life. This paper proposes a novel wireless prototype of a live weather monitoring station that uploads weather information received from the array of sensors to cloud database from a remote location which can be monitored from anywhere. The weather data is recorded, monitored and processed to forecast the different weather events and predict the upcoming disasters. The proposed battery powered cost-effective system can be installed anywhere within a locality or building to serve the maximum people. It is composed of three major modules-the wireless sensor module (IEEE802.15.4/Zigbee), the Arduino microcontroller with Ethernet/Wi-Fi network connectivity and an android app for users. Instant alert messages will be received to phone via text, e-mail and tweet notification through this app when something goes haywire. The user can view weather forecast for his location that he can share with the entire world and access archive of his station's current/historical data including graphs and charts to view climate trends.
{"title":"A wireless framework for environmental monitoring and instant response alert","authors":"Shreedeep Gangopadhyay, Molay Kumar Mondal","doi":"10.1109/MICROCOM.2016.7522535","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522535","url":null,"abstract":"The Internet of Things (IoT) is one of the major technological trends which is utilized to monitor natural and human made resources to help in predicting and detecting exigence events like flood, fire, gas and water leak that can pose an intimidation to human life. This paper proposes a novel wireless prototype of a live weather monitoring station that uploads weather information received from the array of sensors to cloud database from a remote location which can be monitored from anywhere. The weather data is recorded, monitored and processed to forecast the different weather events and predict the upcoming disasters. The proposed battery powered cost-effective system can be installed anywhere within a locality or building to serve the maximum people. It is composed of three major modules-the wireless sensor module (IEEE802.15.4/Zigbee), the Arduino microcontroller with Ethernet/Wi-Fi network connectivity and an android app for users. Instant alert messages will be received to phone via text, e-mail and tweet notification through this app when something goes haywire. The user can view weather forecast for his location that he can share with the entire world and access archive of his station's current/historical data including graphs and charts to view climate trends.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127862186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522408
Deepali Vasnik, M. Pattanaik
A double gated structure of Gate-Stack Doping-Less Tunnel Field Effect Transistor (GS-DLTFET) is proposed in this paper. Source and Drain regions of the FET are not doped using the charge plasma concept, which makes the device free from the random dopant fluctuation issue. A multi-layer structure is formed on the gate by imposing the layers of dielectrics. The device thus formed is analyzed by various parameters i.e., performing the AC and DC simulations on the device and studying the drain current characteristics of the device. One of the important factor i.e., effect of temperature variations are also seen on the various parameters of the device. The analyzed results are compared with the Doping-Less Tunnel Field Effect Transistor (DLTFET) and found to be better in performance. SILVACO ATLAS device simulator software has been used to carry out the simulations of the proposed device for analyzing the device performance.
{"title":"Study of DC and AC characteristics of gate-stack doping-less tunnel FET","authors":"Deepali Vasnik, M. Pattanaik","doi":"10.1109/MICROCOM.2016.7522408","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522408","url":null,"abstract":"A double gated structure of Gate-Stack Doping-Less Tunnel Field Effect Transistor (GS-DLTFET) is proposed in this paper. Source and Drain regions of the FET are not doped using the charge plasma concept, which makes the device free from the random dopant fluctuation issue. A multi-layer structure is formed on the gate by imposing the layers of dielectrics. The device thus formed is analyzed by various parameters i.e., performing the AC and DC simulations on the device and studying the drain current characteristics of the device. One of the important factor i.e., effect of temperature variations are also seen on the various parameters of the device. The analyzed results are compared with the Doping-Less Tunnel Field Effect Transistor (DLTFET) and found to be better in performance. SILVACO ATLAS device simulator software has been used to carry out the simulations of the proposed device for analyzing the device performance.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131277496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-28DOI: 10.1109/MICROCOM.2016.7522582
S. Saha, Biswarup Ganguly, A. Konar
A simple and robust gesture recognition system is proposed for better human-computer interaction using Microsoft's Kinect sensor. The Kinect is employed to construct skeletons for a subject in the 3D space using twenty body joint coordinates. From this skeletal information, ten joints are required and six triangles have been constructed along with six respective centroids. The feature space corresponds to the Euclidean distances between spine joint and the centroids for each frame. For classification purpose, support vector machine is used using a kernel function. The proposed work is widely applicable for several gesture driven computer applications and produces an average accuracy rate of 88.7%.
{"title":"Gesture based improved human-computer interaction using Microsoft's Kinect sensor","authors":"S. Saha, Biswarup Ganguly, A. Konar","doi":"10.1109/MICROCOM.2016.7522582","DOIUrl":"https://doi.org/10.1109/MICROCOM.2016.7522582","url":null,"abstract":"A simple and robust gesture recognition system is proposed for better human-computer interaction using Microsoft's Kinect sensor. The Kinect is employed to construct skeletons for a subject in the 3D space using twenty body joint coordinates. From this skeletal information, ten joints are required and six triangles have been constructed along with six respective centroids. The feature space corresponds to the Euclidean distances between spine joint and the centroids for each frame. For classification purpose, support vector machine is used using a kernel function. The proposed work is widely applicable for several gesture driven computer applications and produces an average accuracy rate of 88.7%.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121788927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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