{"title":"Tunneling mechanism of dielectric relaxation and conduction","authors":"V. Veksler, E. F. Orlova","doi":"10.1109/ICSD.1989.69194","DOIUrl":null,"url":null,"abstract":"The tunneling mechanism of dielectric relaxation and conduction is investigated in the framework of a one-dimensional potential barrier model with two minima. It is shown that, under specified conditions, the action of the relaxation quantum mechanism is displayed in electrets with light relaxators at low temperature.<<ETX>>","PeriodicalId":184126,"journal":{"name":"Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSD.1989.69194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The tunneling mechanism of dielectric relaxation and conduction is investigated in the framework of a one-dimensional potential barrier model with two minima. It is shown that, under specified conditions, the action of the relaxation quantum mechanism is displayed in electrets with light relaxators at low temperature.<>
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