S. Iacovo, Soon-Wook Kim, F. Nagano, Lan Peng, F. Inoue, A. Phommahaxay, E. Beyne
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引用次数: 3
Abstract
Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 °C. The excellent results should be attributed to the tight control on the different processing steps but also to the properties of the SiCN dielectric used as bonding material.
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