{"title":"InGaAs/InP avalanche photodiodes with a thin multiplication layer","authors":"D. Haško, F. Uherek, F. Mika","doi":"10.1109/ASDAM.2002.1088483","DOIUrl":null,"url":null,"abstract":"We report on the design and characterization of a low-noise and low voltage InGaAs/InP avalanche photodiode (APD) grown by metalorganic chemical vapour deposition (MOCVD). The investigated InGaAs/InP APD structure for lightwave transmission systems consists of separate absorption InGaAs, charge InP and InP multiplication layers (SACM). The designed APD without a guard ring exhibits a dark current less than 5 /spl mu/A near the breakdown voltage (V/sub B/ /spl ap/ 48 V). External quantum efficiency >75% (at /spl lambda/ = 1300 nm), avalanche gain up to 5 and capacitance lower than 1.1 pF at the operating voltage were achieved. The measured temperature dependence of current-voltage characteristics, capacitance-voltage and spectral characteristics are presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"21 5 Suppl 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report on the design and characterization of a low-noise and low voltage InGaAs/InP avalanche photodiode (APD) grown by metalorganic chemical vapour deposition (MOCVD). The investigated InGaAs/InP APD structure for lightwave transmission systems consists of separate absorption InGaAs, charge InP and InP multiplication layers (SACM). The designed APD without a guard ring exhibits a dark current less than 5 /spl mu/A near the breakdown voltage (V/sub B/ /spl ap/ 48 V). External quantum efficiency >75% (at /spl lambda/ = 1300 nm), avalanche gain up to 5 and capacitance lower than 1.1 pF at the operating voltage were achieved. The measured temperature dependence of current-voltage characteristics, capacitance-voltage and spectral characteristics are presented.
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