J. Plouchart, Dereje Yilma, John Timmerwilke, S. Chakraborty, K. Tien, A. Valdes-Garcia, D. Friedman
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引用次数: 3
Abstract
A 5.9-8.4GHz LNA intended for use at cryogenic temperatures was implemented in a 14nm FinFET CMOS technology. At 4.1 K, peak LNA gain of 13.4dB is measured at 7.1GHz, with a 3dB bandwidth of 2.5GHz and power consumption of 2.1mW. Also, at 4.1K, measured noise figure from 6 to 8GHz is 0.53-0.57dB and the measured noise temperature is 37.6-41K; power consumption in this set of measurements was 2.57mW.
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