MMIC GaAs X-Band Isolator with Enhanced Power Transmission Response

Andrea Ashley, G. Lasser, Z. Popovic, A. Madanayake, D. Psychogiou
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引用次数: 2

Abstract

This paper discusses the RF design and characterization of an X-band MMIC isolator. It is based on a directional coupler and a non-reciprocal RF signal path that comprises a gain stage and two transmission line elements for phase control. In this manner, enhanced power transmission is obtained in the forward direction and isolation in the reverse one. The operating principles and RF design trade-offs (isolation, gain, matching) of the isolator are presented through circuit-based analysis. For proof-of-concept demonstration purposes, a prototype was designed at X-band and manufactured with a commercial MMIC GaAs process. Its RF measured performance is summarized as follows: center frequency: 9.4 GHz, maximum gain = 9.3 dB, maximum isolation = 27.7 dB, and 3 dB passband bandwidth with > 23 dB of isolation= 1.61 GHz.
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增强功率传输响应的MMIC GaAs x波段隔离器
本文讨论了一种x波段MMIC隔离器的射频设计和特性。它基于一个定向耦合器和一个非互易射频信号路径,该路径包括一个增益级和两个用于相位控制的传输线元件。通过这种方式,可以实现正向增强的功率传输和反向隔离。通过基于电路的分析,介绍了隔离器的工作原理和射频设计权衡(隔离、增益、匹配)。为了验证概念演示的目的,在x波段设计了一个原型,并使用商用MMIC GaAs工艺制造。其射频测量性能总结如下:中心频率:9.4 GHz,最大增益= 9.3 dB,最大隔离度= 27.7 dB, 3db通带带宽> 23 dB隔离度= 1.61 GHz。
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