An application specific embeddable flash memory system for non-volatile storage of code, data and bit-streams for embedded FPGA configurations

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) Pub Date : 2003-06-12 DOI:10.1109/VLSIC.2003.1221206

M. Pasotti, G. De Sandre, D. Iezzi, D. Lena, G. Muzzi, M. Poles, P. Rolandi

引用次数: 7

Abstract

A 8 Mb application-specific embeddable flash memory is presented. It features 3 content-specific I/O ports, delivers a peak read throughput of 1.2 GB/S, and, combined with a special automatic programming gate voltage ramp generator circuit, a programming rate of 1Mbyte/s for non-volatile storage of code, data and embedded FPGA bit stream configurations. The test chip has been designed using a NOR type 0.18 /spl mu/m flash embedded technology with 1.8 V power supply, 2 poly, 6 metal and memory cell size of 0.35 /spl mu/m/sup 2/.

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用于嵌入式FPGA配置的代码、数据和位流的非易失性存储的特定应用可嵌入闪存系统

介绍了一种8mb专用嵌入式快闪存储器。它具有3个内容特定的I/O端口，提供1.2 GB/S的峰值读取吞吐量，并且结合特殊的自动编程门电压斜坡发生器电路，编程速率为1Mbyte/ S，用于代码、数据和嵌入式FPGA位流配置的非易失性存储。测试芯片采用NOR型0.18 /spl mu/m闪存嵌入式技术，采用1.8 V电源，2 poly, 6 metal，存储单元尺寸为0.35 /spl mu/m/sup 2/。

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2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)

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