{"title":"A 13. 8 μW Wake-Up Receiver With 0.4 mVpp Sensitivity For Low Frequency Applications","authors":"Wentao Xu, Zhige Zou, Jianming Lei, Qiaoling Tong, Wenhai Wu","doi":"10.1109/CICTA.2018.8706076","DOIUrl":null,"url":null,"abstract":"In this paper, a low power low frequency (LF) wake-up receiver was presented. To achieve high sensitivity, a selective amplifier, implemented in an architecture of three-stage fully differential cascade amplifier, utilized neutralization technique and high pass filters to achieve a maximum gain of 50 dB at 125 kHz while maintaining low power. The whole receiver was designed and fabricated in SMIC 0.18 $\\mu$m CMOS process with a total size of 0.96 m$\\mathrm{m}^{2}$. As a result, the measurements showed that the design achieved a sensitivity of 0.4 mVpp while dissipating just 4.2 $\\mu$A from a 3.3 V supply voltage.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a low power low frequency (LF) wake-up receiver was presented. To achieve high sensitivity, a selective amplifier, implemented in an architecture of three-stage fully differential cascade amplifier, utilized neutralization technique and high pass filters to achieve a maximum gain of 50 dB at 125 kHz while maintaining low power. The whole receiver was designed and fabricated in SMIC 0.18 $\mu$m CMOS process with a total size of 0.96 m$\mathrm{m}^{2}$. As a result, the measurements showed that the design achieved a sensitivity of 0.4 mVpp while dissipating just 4.2 $\mu$A from a 3.3 V supply voltage.