Electrical and structural characterization of electrodeposited Ni nanowires

M. V. P. D. Santos, Lucas P. B. Lima, R. Mayer, Jefferson Bettini, F. Béron, K. R. Pirota, José Alexandre Diniz
{"title":"Electrical and structural characterization of electrodeposited Ni nanowires","authors":"M. V. P. D. Santos, Lucas P. B. Lima, R. Mayer, Jefferson Bettini, F. Béron, K. R. Pirota, José Alexandre Diniz","doi":"10.1109/SBMICRO.2015.7298149","DOIUrl":null,"url":null,"abstract":"Nanowires (NW) have received much attention due to their shape anisotropy, high aspect ratio, relatively large surface area and particular electron transport properties. In addition, NW can be used as sensor devices for several applications, since they present high sensitivity to the environment. One of the major challenges when dealing with transport measurements in NW is to trap them between electrodes, which allows electrical characterization and therefore fabrication of nanowire-based devices. Electrically neutral NW can be deposited by dielectrophoresis (DEP) method, which requires the application of an alternating electric field between electrodes. In this work, Ni nanowires (NiNW) fabricated by electrodeposition technique and properly dispersed in a DMF solution were deposited on top of Pt electrodes using the DEP method. The deposited NiNW exhibit initially a Schottky-like current versus voltage behavior due to the high contact resistance between NiNW and electrode. Its reduction down to two orders of magnitude, reaching value less than the NiNW resistance, was achieved by depositing an ion beam-assisted 10 nm-thick Pt layer over the NW extremities. Therefore, this method presents a suitable process of NW deposition and electrical characterization. This can be used for investigation of electrical transport properties of individual NW and fabrication of NW-based devices, such as sensors and field effect transistors. Especially for ferromagnetic NW, one can use the present method for fabrication of magnetic field-effect transistors (MagFET).","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2015.7298149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Nanowires (NW) have received much attention due to their shape anisotropy, high aspect ratio, relatively large surface area and particular electron transport properties. In addition, NW can be used as sensor devices for several applications, since they present high sensitivity to the environment. One of the major challenges when dealing with transport measurements in NW is to trap them between electrodes, which allows electrical characterization and therefore fabrication of nanowire-based devices. Electrically neutral NW can be deposited by dielectrophoresis (DEP) method, which requires the application of an alternating electric field between electrodes. In this work, Ni nanowires (NiNW) fabricated by electrodeposition technique and properly dispersed in a DMF solution were deposited on top of Pt electrodes using the DEP method. The deposited NiNW exhibit initially a Schottky-like current versus voltage behavior due to the high contact resistance between NiNW and electrode. Its reduction down to two orders of magnitude, reaching value less than the NiNW resistance, was achieved by depositing an ion beam-assisted 10 nm-thick Pt layer over the NW extremities. Therefore, this method presents a suitable process of NW deposition and electrical characterization. This can be used for investigation of electrical transport properties of individual NW and fabrication of NW-based devices, such as sensors and field effect transistors. Especially for ferromagnetic NW, one can use the present method for fabrication of magnetic field-effect transistors (MagFET).
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电沉积镍纳米线的电学和结构表征
纳米线因其形状各向异性、高宽高比、较大的比表面积和特殊的电子输运特性而受到广泛关注。此外,NW可以用作多种应用的传感器设备,因为它们对环境具有高灵敏度。处理NW输运测量时的主要挑战之一是在电极之间捕获它们,这允许进行电学表征,从而制造基于纳米线的设备。电中性NW可以通过介质电泳(DEP)方法沉积,该方法需要在电极之间施加交变电场。在这项工作中,采用电沉积技术制备镍纳米线,并在DMF溶液中适当分散,使用DEP方法将其沉积在Pt电极上。由于NiNW与电极之间的高接触电阻,沉积的NiNW最初表现出类似肖特基的电流与电压行为。通过在NW端沉积离子束辅助的10nm厚Pt层,将其降低到两个数量级,达到小于NiNW电阻的值。因此,该方法提供了一种适合NW沉积和电学表征的方法。这可以用于研究单个NW的电输运特性和制造基于NW的器件,如传感器和场效应晶体管。特别是对于铁磁NW,可以使用本方法制造磁场效应晶体管(MagFET)。
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