H. Kim, J. Jin, C. Jeoun, Y. Choi, B. Kwon, S. Lim, K. Choi
{"title":"A novel high voltage bipolar technology featuring trench-isolated base","authors":"H. Kim, J. Jin, C. Jeoun, Y. Choi, B. Kwon, S. Lim, K. Choi","doi":"10.1109/ISPSD.1994.583748","DOIUrl":null,"url":null,"abstract":"In this paper, we present a novel bipolar technology featuring the trench-isolated base. When employed for a conventional 2 /spl mu/m process, the trench isolation reduces both the surface leakage and current gain of the parasitic lateral pnp transistor by at least one order, which results in the improvement of the punchthrough-induced breakdown behavior by almost a factor of two. The depletion capacitance is also diminished by about 60% thanks to the decrease of the effective base-collector junction area, suggesting that the trench isolation is a viable approach even for high frequency as well as for high voltage applications.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we present a novel bipolar technology featuring the trench-isolated base. When employed for a conventional 2 /spl mu/m process, the trench isolation reduces both the surface leakage and current gain of the parasitic lateral pnp transistor by at least one order, which results in the improvement of the punchthrough-induced breakdown behavior by almost a factor of two. The depletion capacitance is also diminished by about 60% thanks to the decrease of the effective base-collector junction area, suggesting that the trench isolation is a viable approach even for high frequency as well as for high voltage applications.