{"title":"Nonlinear Conductivity and Surface Charge Decay Characteristics of SiC/Epoxy Resin Composites","authors":"Hongda Yang, Shiyu Chen, Zhong-Yuan Li, Heqian Liu, Weinan Gao, H. Jia","doi":"10.1109/CEECT55960.2022.10030709","DOIUrl":null,"url":null,"abstract":"The insulator of the gas insulated switchgear (GIS) is casted with epoxy resin. Under DC voltage, surface area charge accumulation will cause electric field distortion even surface flashover. The effects of different mass fractions of silicon carbide (SiC) on DC conductance and surface charge of epoxy resin were studied. The results show that the conductivity of epoxy resin composites is nonlinear at high field when the content of SIC exceeds 10%. With the increase of SiC content, more shallow traps are introduced, which is conducive to the dissipation of surface charge.","PeriodicalId":187017,"journal":{"name":"2022 4th International Conference on Electrical Engineering and Control Technologies (CEECT)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 4th International Conference on Electrical Engineering and Control Technologies (CEECT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEECT55960.2022.10030709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The insulator of the gas insulated switchgear (GIS) is casted with epoxy resin. Under DC voltage, surface area charge accumulation will cause electric field distortion even surface flashover. The effects of different mass fractions of silicon carbide (SiC) on DC conductance and surface charge of epoxy resin were studied. The results show that the conductivity of epoxy resin composites is nonlinear at high field when the content of SIC exceeds 10%. With the increase of SiC content, more shallow traps are introduced, which is conducive to the dissipation of surface charge.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
